MPSA29RLRPG
  • Share:

onsemi MPSA29RLRPG

Manufacturer No:
MPSA29RLRPG
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN DARL 100V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29RLRPG is an NPN Bipolar Darlington Transistor produced by onsemi. This transistor is designed for use in various switching applications such as print hammer, relay, solenoid, and lamp drivers. It is housed in the TO-92 package, which is suitable for medium power applications. The device is known for simplifying circuit design, reducing board space, and minimizing component count. Additionally, Pb-free packages are available, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCES 100 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 12 Vdc
Collector Current - Continuous IC 500 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 k
Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) 1.5 Vdc
Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) 2.0 Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 125 MHz

Key Features

  • Pb-Free Packages Available: The MPSA29RLRPG is offered in Pb-free packages, aligning with environmental regulations and reducing the use of hazardous materials.
  • High DC Current Gain: The transistor has a high DC current gain (hFE) of up to 10,000, making it suitable for applications requiring high current amplification.
  • Low Collector-Emitter Saturation Voltage: The VCE(sat) is as low as 1.5 Vdc, which helps in reducing power losses in switching applications.
  • Wide Operating Temperature Range: The device can operate over a temperature range of -55°C to +150°C, making it versatile for various environmental conditions.
  • Compact TO-92 Package: The transistor is housed in a TO-92 package, which is compact and suitable for medium power applications, helping to reduce board space and component count.

Applications

  • Switching Applications: The MPSA29RLRPG is designed for use in switching applications such as print hammers, relays, solenoids, and lamp drivers.
  • Power Management: It can be used in power management circuits where high current gain and low saturation voltage are required.
  • Industrial Control Systems: The transistor is suitable for use in industrial control systems where reliability and high performance are crucial.
  • Automotive Systems: It can be used in automotive systems for various control and switching functions due to its robust operating temperature range.

Q & A

  1. What is the collector-emitter voltage rating of the MPSA29RLRPG?

    The collector-emitter voltage (VCES) rating is 100 Vdc.

  2. What is the continuous collector current rating of the MPSA29RLRPG?

    The continuous collector current (IC) rating is 500 mA.

  3. What is the operating temperature range of the MPSA29RLRPG?

    The operating temperature range is -55°C to +150°C.

  4. Is the MPSA29RLRPG available in Pb-free packages?
  5. What is the DC current gain (hFE) of the MPSA29RLRPG?

    The DC current gain (hFE) is up to 10,000.

  6. What is the collector-emitter saturation voltage (VCE(sat)) of the MPSA29RLRPG?

    The collector-emitter saturation voltage (VCE(sat)) is as low as 1.5 Vdc.

  7. In what package is the MPSA29RLRPG housed?

    The MPSA29RLRPG is housed in the TO-92 package.

  8. What are some typical applications of the MPSA29RLRPG?

    Typical applications include switching applications such as print hammers, relays, solenoids, and lamp drivers.

  9. What is the thermal resistance, junction-to-ambient (RθJA) of the MPSA29RLRPG?

    The thermal resistance, junction-to-ambient (RθJA), is 200 °C/W.

  10. What is the current-gain bandwidth product (fT) of the MPSA29RLRPG?

    The current-gain bandwidth product (fT) is 125 MHz.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:TO-92 (TO-226)
0 Remaining View Similar

In Stock

-
571

Please send RFQ , we will respond immediately.

Same Series
MPSA29RLRPG
MPSA29RLRPG
TRANS NPN DARL 100V 0.5A TO92
MPSA28RLRPG
MPSA28RLRPG
TRANS NPN DARL 80V 0.5A TO92

Similar Products

Part Number MPSA29RLRPG MPSA28RLRPG MPSA29RLRP
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington -
Current - Collector (Ic) (Max) 500 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 100 V 80 V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA -
Current - Collector Cutoff (Max) 500nA 500nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V -
Power - Max 625 mW 625 mW -
Frequency - Transition 200MHz 200MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole -
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) -
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) -

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN