MJE350STU
  • Share:

onsemi MJE350STU

Manufacturer No:
MJE350STU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 300V 0.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE350STU is a PNP epitaxial silicon transistor manufactured by onsemi. Although this component is currently listed as obsolete and no longer in production, it was designed for high-voltage general-purpose applications. The transistor is housed in a TO-126 package and is known for its high collector-emitter breakdown voltage, making it suitable for various high-voltage applications.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) -300 V
Collector-Emitter Voltage (VCEO) -300 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -500 mA
Collector Dissipation (PC) 20 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C
DC Current Gain (hFE) 30 to 240 -
Collector-Emitter Breakdown Voltage (BVCEO) -300 V

Key Features

  • High collector-emitter breakdown voltage of 300V, making it suitable for high-voltage applications.
  • High current handling capability with a maximum collector current of 500 mA.
  • High power dissipation of up to 20W.
  • PNP epitaxial silicon transistor in a TO-126 package.
  • Suitable for transformer and other high-voltage general-purpose applications.
  • Complement to the MJE340 transistor.

Applications

  • High-voltage general-purpose applications.
  • Transformer applications.
  • Power amplifiers and switching circuits.
  • Industrial control systems.
  • Automotive and consumer electronics where high voltage and current handling are required.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE350STU transistor?

    The maximum collector-emitter voltage (VCEO) is 300V.

  2. What is the maximum collector current of the MJE350STU transistor?

    The maximum collector current (IC) is 500 mA.

  3. What is the power dissipation of the MJE350STU transistor?

    The power dissipation (PC) is up to 20W.

  4. What package type is the MJE350STU transistor housed in?

    The transistor is housed in a TO-126 package.

  5. Is the MJE350STU transistor still in production?

    No, the MJE350STU is currently listed as obsolete and no longer in production.

  6. What are some common applications of the MJE350STU transistor?

    High-voltage general-purpose applications, transformer applications, power amplifiers, and industrial control systems.

  7. What is the DC current gain range of the MJE350STU transistor?

    The DC current gain (hFE) ranges from 30 to 240.

  8. What is the junction temperature range of the MJE350STU transistor?

    The junction temperature (TJ) is up to 150°C.

  9. What is the storage temperature range of the MJE350STU transistor?

    The storage temperature (TSTG) range is from -65°C to 150°C.

  10. Is the MJE350STU transistor suitable for life support systems or medical devices?

    No, the MJE350STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
0 Remaining View Similar

In Stock

-
17

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJE350STU MJE340STU
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC