MJE350STU
  • Share:

onsemi MJE350STU

Manufacturer No:
MJE350STU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 300V 0.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE350STU is a PNP epitaxial silicon transistor manufactured by onsemi. Although this component is currently listed as obsolete and no longer in production, it was designed for high-voltage general-purpose applications. The transistor is housed in a TO-126 package and is known for its high collector-emitter breakdown voltage, making it suitable for various high-voltage applications.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) -300 V
Collector-Emitter Voltage (VCEO) -300 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -500 mA
Collector Dissipation (PC) 20 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C
DC Current Gain (hFE) 30 to 240 -
Collector-Emitter Breakdown Voltage (BVCEO) -300 V

Key Features

  • High collector-emitter breakdown voltage of 300V, making it suitable for high-voltage applications.
  • High current handling capability with a maximum collector current of 500 mA.
  • High power dissipation of up to 20W.
  • PNP epitaxial silicon transistor in a TO-126 package.
  • Suitable for transformer and other high-voltage general-purpose applications.
  • Complement to the MJE340 transistor.

Applications

  • High-voltage general-purpose applications.
  • Transformer applications.
  • Power amplifiers and switching circuits.
  • Industrial control systems.
  • Automotive and consumer electronics where high voltage and current handling are required.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE350STU transistor?

    The maximum collector-emitter voltage (VCEO) is 300V.

  2. What is the maximum collector current of the MJE350STU transistor?

    The maximum collector current (IC) is 500 mA.

  3. What is the power dissipation of the MJE350STU transistor?

    The power dissipation (PC) is up to 20W.

  4. What package type is the MJE350STU transistor housed in?

    The transistor is housed in a TO-126 package.

  5. Is the MJE350STU transistor still in production?

    No, the MJE350STU is currently listed as obsolete and no longer in production.

  6. What are some common applications of the MJE350STU transistor?

    High-voltage general-purpose applications, transformer applications, power amplifiers, and industrial control systems.

  7. What is the DC current gain range of the MJE350STU transistor?

    The DC current gain (hFE) ranges from 30 to 240.

  8. What is the junction temperature range of the MJE350STU transistor?

    The junction temperature (TJ) is up to 150°C.

  9. What is the storage temperature range of the MJE350STU transistor?

    The storage temperature (TSTG) range is from -65°C to 150°C.

  10. Is the MJE350STU transistor suitable for life support systems or medical devices?

    No, the MJE350STU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:20 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
0 Remaining View Similar

In Stock

-
17

Please send RFQ , we will respond immediately.

Similar Products

Part Number MJE350STU MJE340STU
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 20 W 20 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3

Related Product By Categories

PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC