MJE243G
  • Share:

onsemi MJE243G

Manufacturer No:
MJE243G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 100V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE243G is a complementary silicon power transistor produced by onsemi, specifically designed as an NPN transistor. It is part of the MJE243/MJE253 series, which includes both NPN and PNP types. This transistor is optimized for low power audio amplifier and low-current, high-speed switching applications. The MJE243G is known for its high collector-emitter sustaining voltage, high DC current gain, and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCB 100 Vdc
Emitter-Base Voltage VEB 7.0 Vdc
Collector Current - Continuous IC 4.0 Adc
Collector Current - Peak ICM 8.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 15 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
Transition Frequency fT 40 MHz
Collector Capacitance Cob 50 pF
Forward Current Transfer Ratio (hFE), MIN hFE 40

Key Features

  • High Collector-Emitter Sustaining Voltage
  • High DC Current Gain
  • Low Collector-Emitter Saturation Voltage
  • High Current Gain Bandwidth Product
  • Annular Construction for Low Leakages
  • Pb-Free and RoHS Compliant

Applications

The MJE243G is designed for low power audio amplifier and low-current, high-speed switching applications. It is suitable for use in various electronic circuits where high reliability and performance are required, such as in audio equipment, switching circuits, and general-purpose amplifiers.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE243G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating of the MJE243G?

    The continuous collector current (IC) is 4.0 Adc.

  3. What is the peak collector current rating of the MJE243G?

    The peak collector current (ICM) is 8.0 Adc.

  4. What is the maximum base current rating of the MJE243G?

    The maximum base current (IB) is 1.0 Adc.

  5. What is the total power dissipation of the MJE243G at TC = 25°C?

    The total power dissipation (PD) at TC = 25°C is 15 W.

  6. What is the operating and storage junction temperature range of the MJE243G?

    The operating and storage junction temperature range (TJ, Tstg) is –65 to +150 °C.

  7. What is the transition frequency of the MJE243G?

    The transition frequency (fT) is 40 MHz.

  8. Is the MJE243G Pb-Free and RoHS Compliant?
  9. What is the typical collector-emitter saturation voltage of the MJE243G?

    The typical collector-emitter saturation voltage (VCE(sat)) is 0.3 to 0.6 V.

  10. What package type is the MJE243G available in?

    The MJE243G is available in the TO-225 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 200mA, 1V
Power - Max:1.5 W
Frequency - Transition:40MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.65
776

Please send RFQ , we will respond immediately.

Same Series
MJE253G
MJE253G
TRANS PNP 100V 4A TO126

Similar Products

Part Number MJE243G MJE253G MJE243
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V 40 @ 200mA, 1V 40 @ 200mA, 1V
Power - Max 1.5 W 1.5 W 15 W
Frequency - Transition 40MHz 40MHz 40MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126

Related Product By Categories

MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO