Overview
The MJE253G is a PNP complementary silicon power transistor manufactured by onsemi. This device is designed for low power audio amplifier and low-current, high-speed switching applications. It is part of the MJE253G and MJE243G series, which are Pb-free and RoHS compliant.
The MJE253G offers high collector-emitter sustaining voltage, high DC current gain, and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 7.0 | Vdc |
| Collector Current - Continuous | IC | 4.0 | Adc |
| Collector Current - Peak | ICM | 8.0 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 15 | W |
| Thermal Resistance, Junction-to-Case | RJC | 8.34 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 83.4 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
| DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) | hFE | 40 - 180 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) | VCE(sat) | 0.3 - 0.6 | V |
| Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) | VBE(sat) | 1.8 | V |
| Current-Gain Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) | fT | 40 | MHz |
Key Features
- High Collector-Emitter Sustaining Voltage (VCEO = 100 Vdc)
- High DC Current Gain (hFE = 40 - 180)
- Low Collector-Emitter Saturation Voltage (VCE(sat) = 0.3 - 0.6 V)
- High Current Gain Bandwidth Product (fT = 40 MHz)
- Annular Construction for Low Leakages
- Pb-free and RoHS Compliant
Applications
The MJE253G is suitable for various applications, including:
- Low power audio amplifiers
- Low-current, high-speed switching circuits
- General-purpose power amplification
- Driver stages in power supplies and motor control systems
Q & A
- What is the maximum collector-emitter voltage of the MJE253G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating of the MJE253G?
The continuous collector current (IC) is 4.0 Adc.
- What is the thermal resistance from junction to case for the MJE253G?
The thermal resistance from junction to case (RJC) is 8.34 °C/W.
- Is the MJE253G Pb-free and RoHS compliant?
- What is the typical DC current gain of the MJE253G?
The typical DC current gain (hFE) ranges from 40 to 180.
- What is the collector-emitter saturation voltage of the MJE253G?
The collector-emitter saturation voltage (VCE(sat)) is between 0.3 and 0.6 V.
- What is the current-gain bandwidth product of the MJE253G?
The current-gain bandwidth product (fT) is 40 MHz.
- What are the operating and storage junction temperature ranges for the MJE253G?
The operating and storage junction temperature range is –65 to +150 °C.
- What type of construction does the MJE253G have to reduce leakages?
The MJE253G has an annular construction to reduce leakages.
- What are some common applications of the MJE253G?
