MBRS3100T3G
  • Share:

onsemi MBRS3100T3G

Manufacturer No:
MBRS3100T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 3A SMC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRS3100T3G is a Schottky power rectifier produced by onsemi, designed for high-efficiency, low-voltage, and high-frequency applications. This device utilizes the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry and epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for surface mount applications where compact size and weight are critical.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (At Rated VR, TL = 100°C) IF(AV) 3.0 A
Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 130 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage (iF = 3.0 A, TJ = 25°C) VF 0.79 V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) iR 0.05 mA
Thermal Resistance, Junction-to-Lead RθJL 11 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 85 °C/W

Key Features

  • Small compact surface mountable package with J-bend leads
  • Rectangular package for automated handling
  • Highly stable oxide passivated junction
  • Excellent ability to withstand reverse avalanche energy transients
  • Guard-ring for stress protection
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

The MBRS3100T3G is suitable for a variety of applications, including:

  • Low voltage, high frequency rectification
  • Free wheeling and polarity protection diodes
  • Surface mount applications where compact size and weight are critical
  • Automotive and industrial systems requiring high reliability and compliance with AEC-Q101 standards

Q & A

  1. What is the peak repetitive reverse voltage of the MBRS3100T3G?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current of the MBRS3100T3G at rated VR and TL = 100°C?

    The average rectified forward current (IF(AV)) is 3.0 A.

  3. What is the non-repetitive peak surge current of the MBRS3100T3G?

    The non-repetitive peak surge current (IFSM) is 130 A.

  4. What is the operating junction temperature range of the MBRS3100T3G?

    The operating junction temperature range (TJ) is −65 to +175°C.

  5. What is the maximum instantaneous forward voltage of the MBRS3100T3G at 3.0 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 3.0 A and 25°C is 0.79 V.

  6. Is the MBRS3100T3G RoHS compliant?
  7. What are the thermal resistance values for the MBRS3100T3G?

    The thermal resistance from junction-to-lead (RθJL) is 11°C/W, and from junction-to-ambient (RθJA) is 85°C/W.

  8. What is the package type of the MBRS3100T3G?

    The MBRS3100T3G comes in a surface mount SMC 2-lead package.

  9. Is the MBRS3100T3G suitable for automotive applications?
  10. What is the weight of the MBRS3100T3G?

    The weight of the MBRS3100T3G is approximately 217 mg.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:790 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.64
1,350

Please send RFQ , we will respond immediately.

Same Series
MBRS3100T3G
MBRS3100T3G
DIODE SCHOTTKY 100V 3A SMC
MBRS3100T3
MBRS3100T3
DIODE SCHOTTKY 100V 3A SMC

Similar Products

Part Number MBRS3100T3G MBRS3200T3G MBRS3100T3H MBRS1100T3G MBRS3100PT3G MBRS3100T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 3A 3A 3A 1A 3A 3A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 3 A 840 mV @ 3 A 900 mV @ 6 A 750 mV @ 1 A 790 mV @ 3 A 790 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 50 µA @ 100 V 1 mA @ 200 V 50 µA @ 100 V 500 µA @ 100 V 200 µA @ 100 V 50 µA @ 100 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC DO-214AB, SMC
Supplier Device Package SMC SMB SMC SMB SMC SMC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5