MBRM130LT1G
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onsemi MBRM130LT1G

Manufacturer No:
MBRM130LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM130LT1G is a surface mount Schottky power rectifier produced by onsemi, utilizing the Schottky Barrier principle with a barrier metal and epitaxial construction. This design optimizes the forward voltage drop and reverse current tradeoff, making it highly efficient. The advanced packaging techniques result in a micro miniature, space-saving surface mount rectifier. With its unique heatsink design, the Powermite series offers the same thermal performance as the SMA package but is 50% smaller in footprint area and has one of the lowest height profiles in the industry, at less than 1.1 mm. This component is ideal for use in portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Key Specifications

Parameter Value Unit
VRRM (Peak Repetitive Reverse Voltage) 30 V
IO (Average Rectified Forward Current) 1.0 A
IFRM (Peak Repetitive Forward Current) 2.0 A
IFSM (Non-Repetitive Peak Surge Current) 50 A
Tstg (Storage Temperature) -55 to 150 °C
TJ (Operating Junction Temperature) -55 to 125 °C
VF (Maximum Instantaneous Forward Voltage) 0.30 - 0.38 V (at IF = 1.0 A, TJ = 25°C) V
IR (Maximum Instantaneous Reverse Current) 0.41 mA (at VR = 30 V, TJ = 25°C) mA
Rtja (Thermal Resistance, Junction-to-Ambient) 277 °C/W °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm
  • Small Footprint: Footprint area of 8.45 mm²
  • Low VF: Provides higher efficiency and extends battery life
  • Supplied in 12 mm tape and reel
  • Low Thermal Resistance: Direct thermal path of die on exposed cathode heat sink
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V)
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free package

Applications

The MBRM130LT1G is suitable for various applications where performance and size are critical. Typical applications include:

  • AC-DC and DC-DC converters
  • Reverse battery protection
  • 'ORing' of multiple supply voltages
  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards

Q & A

  1. What is the maximum repetitive reverse voltage (VRRM) of the MBRM130LT1G?

    The maximum repetitive reverse voltage (VRRM) is 30 V.

  2. What is the average rectified forward current (IO) rating of the MBRM130LT1G?

    The average rectified forward current (IO) is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) at 1.0 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 1.0 A and 25°C is between 0.30 and 0.38 V.

  4. What are the ESD ratings for the MBRM130LT1G?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  5. Is the MBRM130LT1G AEC-Q101 qualified?

    Yes, the MBRM130LT1G is AEC-Q101 qualified and PPAP capable.

  6. What is the thermal resistance (Rtja) of the MBRM130LT1G?

    The thermal resistance (Rtja) is 277 °C/W.

  7. What are the typical applications of the MBRM130LT1G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages, as well as portable and battery-powered products.

  8. What is the footprint area of the MBRM130LT1G?

    The footprint area is 8.45 mm².

  9. Is the MBRM130LT1G Pb-Free?

    Yes, the MBRM130LT1G is Pb-Free.

  10. What is the maximum height of the MBRM130LT1G?

    The maximum height is less than 1.1 mm.

  11. Is the MBRM130LT1G suitable for high-temperature applications?

    The operating junction temperature (TJ) range is -55 to 125°C, making it suitable for a wide range of temperature conditions.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:410 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
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NRVBM130LT3G
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Similar Products

Part Number MBRM130LT1G MBRM130LT3G MBRM130LT1H MBRM110LT1G MBRM120LT1G MBRM130LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 10 V 20 V 30 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 380 mV @ 1 A 380 mV @ 1 A 520 mV @ 3 A 365 mV @ 1 A 450 mV @ 1 A 380 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 410 µA @ 30 V 410 µA @ 30 V 410 µA @ 30 V 500 µA @ 10 V 400 µA @ 20 V 410 µA @ 30 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 150°C

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