MBRM130LT3G
  • Share:

onsemi MBRM130LT3G

Manufacturer No:
MBRM130LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM130LT3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package provides a highly efficient, micro-miniature, and space-saving design, making it ideal for use in portable and battery-powered products. Despite being discontinued for new designs, it remains a significant component in existing applications due to its unique thermal performance and compact size.

Key Specifications

Symbol Characteristic Value Unit
VRRM Peak Repetitive Reverse Voltage 30 V
IO Average Rectified Forward Current (At Rated VR, TC = 135°C) 1.0 A
IFRM Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) 2.0 A
IFSM Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) 50 A
Tstg Storage Temperature -55 to 150 °C
TJ Operating Junction Temperature -55 to 125 °C
VF Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) 0.38 V
IR Maximum Instantaneous Reverse Current (TJ = 25°C, VR = 30 V) 0.41 mA
Rtja Thermal Resistance, Junction-to-Ambient 277 °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free Package: Compliant with lead-free requirements.

Applications

The MBRM130LT3G is typically used in various applications where performance and size are critical, such as:

  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • “ORing” of multiple supply voltages.
  • Portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Q & A

  1. What is the maximum peak repetitive reverse voltage of the MBRM130LT3G?

    The maximum peak repetitive reverse voltage is 30 V.

  2. What is the average rectified forward current rating of the MBRM130LT3G?

    The average rectified forward current rating is 1.0 A at a rated VR and TC = 135°C.

  3. What is the non-repetitive peak surge current rating of the MBRM130LT3G?

    The non-repetitive peak surge current rating is 50 A.

  4. What is the operating junction temperature range of the MBRM130LT3G?

    The operating junction temperature range is -55°C to 125°C.

  5. What is the maximum instantaneous forward voltage of the MBRM130LT3G at 1.0 A and 25°C?

    The maximum instantaneous forward voltage is 0.38 V.

  6. What are the ESD ratings for the MBRM130LT3G?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  7. Is the MBRM130LT3G AEC-Q101 qualified?

    Yes, the MBRM130LT3G is AEC-Q101 qualified and PPAP capable.

  8. What is the thermal resistance, junction-to-ambient, of the MBRM130LT3G?

    The thermal resistance, junction-to-ambient, is 277 °C/W.

  9. What are the typical applications of the MBRM130LT3G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and “ORing” of multiple supply voltages, as well as portable and battery-powered products.

  10. Is the MBRM130LT3G still recommended for new designs?

    No, the MBRM130LT3G is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative parts.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:410 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.42
663

Please send RFQ , we will respond immediately.

Same Series
MBRM130LT1G
MBRM130LT1G
DIODE SCHOTTKY 30V 1A POWERMITE
NRVBM130LT1G
NRVBM130LT1G
DIODE SCHOTTKY 30V 1A POWERMITE
NRVBM130LT3G
NRVBM130LT3G
DIODE SCHOTTKY 30V 1A POWERMITE

Similar Products

Part Number MBRM130LT3G MBRS130LT3G MBRM110LT3G MBRM120LT3G MBRM130LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 10 V 20 V 30 V
Current - Average Rectified (Io) 1A 2A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 380 mV @ 1 A 445 mV @ 2 A 365 mV @ 1 A 450 mV @ 1 A 380 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 410 µA @ 30 V 1 mA @ 30 V 500 µA @ 10 V 400 µA @ 20 V 410 µA @ 30 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-214AA, SMB DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite SMB Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC