MBRM130LT3G
  • Share:

onsemi MBRM130LT3G

Manufacturer No:
MBRM130LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM130LT3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package provides a highly efficient, micro-miniature, and space-saving design, making it ideal for use in portable and battery-powered products. Despite being discontinued for new designs, it remains a significant component in existing applications due to its unique thermal performance and compact size.

Key Specifications

Symbol Characteristic Value Unit
VRRM Peak Repetitive Reverse Voltage 30 V
IO Average Rectified Forward Current (At Rated VR, TC = 135°C) 1.0 A
IFRM Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) 2.0 A
IFSM Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) 50 A
Tstg Storage Temperature -55 to 150 °C
TJ Operating Junction Temperature -55 to 125 °C
VF Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) 0.38 V
IR Maximum Instantaneous Reverse Current (TJ = 25°C, VR = 30 V) 0.41 mA
Rtja Thermal Resistance, Junction-to-Ambient 277 °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free Package: Compliant with lead-free requirements.

Applications

The MBRM130LT3G is typically used in various applications where performance and size are critical, such as:

  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • “ORing” of multiple supply voltages.
  • Portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Q & A

  1. What is the maximum peak repetitive reverse voltage of the MBRM130LT3G?

    The maximum peak repetitive reverse voltage is 30 V.

  2. What is the average rectified forward current rating of the MBRM130LT3G?

    The average rectified forward current rating is 1.0 A at a rated VR and TC = 135°C.

  3. What is the non-repetitive peak surge current rating of the MBRM130LT3G?

    The non-repetitive peak surge current rating is 50 A.

  4. What is the operating junction temperature range of the MBRM130LT3G?

    The operating junction temperature range is -55°C to 125°C.

  5. What is the maximum instantaneous forward voltage of the MBRM130LT3G at 1.0 A and 25°C?

    The maximum instantaneous forward voltage is 0.38 V.

  6. What are the ESD ratings for the MBRM130LT3G?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  7. Is the MBRM130LT3G AEC-Q101 qualified?

    Yes, the MBRM130LT3G is AEC-Q101 qualified and PPAP capable.

  8. What is the thermal resistance, junction-to-ambient, of the MBRM130LT3G?

    The thermal resistance, junction-to-ambient, is 277 °C/W.

  9. What are the typical applications of the MBRM130LT3G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and “ORing” of multiple supply voltages, as well as portable and battery-powered products.

  10. Is the MBRM130LT3G still recommended for new designs?

    No, the MBRM130LT3G is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative parts.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:410 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.42
663

Please send RFQ , we will respond immediately.

Same Series
MBRM130LT1G
MBRM130LT1G
DIODE SCHOTTKY 30V 1A POWERMITE
NRVBM130LT1G
NRVBM130LT1G
DIODE SCHOTTKY 30V 1A POWERMITE
NRVBM130LT3G
NRVBM130LT3G
DIODE SCHOTTKY 30V 1A POWERMITE

Similar Products

Part Number MBRM130LT3G MBRS130LT3G MBRM110LT3G MBRM120LT3G MBRM130LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 10 V 20 V 30 V
Current - Average Rectified (Io) 1A 2A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 380 mV @ 1 A 445 mV @ 2 A 365 mV @ 1 A 450 mV @ 1 A 380 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 410 µA @ 30 V 1 mA @ 30 V 500 µA @ 10 V 400 µA @ 20 V 410 µA @ 30 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-214AA, SMB DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite SMB Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP