MBRM130LT3G
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onsemi MBRM130LT3G

Manufacturer No:
MBRM130LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM130LT3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package provides a highly efficient, micro-miniature, and space-saving design, making it ideal for use in portable and battery-powered products. Despite being discontinued for new designs, it remains a significant component in existing applications due to its unique thermal performance and compact size.

Key Specifications

Symbol Characteristic Value Unit
VRRM Peak Repetitive Reverse Voltage 30 V
IO Average Rectified Forward Current (At Rated VR, TC = 135°C) 1.0 A
IFRM Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) 2.0 A
IFSM Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) 50 A
Tstg Storage Temperature -55 to 150 °C
TJ Operating Junction Temperature -55 to 125 °C
VF Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) 0.38 V
IR Maximum Instantaneous Reverse Current (TJ = 25°C, VR = 30 V) 0.41 mA
Rtja Thermal Resistance, Junction-to-Ambient 277 °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
  • Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
  • Low VF: Provides higher efficiency and extends battery life.
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free Package: Compliant with lead-free requirements.

Applications

The MBRM130LT3G is typically used in various applications where performance and size are critical, such as:

  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • “ORing” of multiple supply voltages.
  • Portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Q & A

  1. What is the maximum peak repetitive reverse voltage of the MBRM130LT3G?

    The maximum peak repetitive reverse voltage is 30 V.

  2. What is the average rectified forward current rating of the MBRM130LT3G?

    The average rectified forward current rating is 1.0 A at a rated VR and TC = 135°C.

  3. What is the non-repetitive peak surge current rating of the MBRM130LT3G?

    The non-repetitive peak surge current rating is 50 A.

  4. What is the operating junction temperature range of the MBRM130LT3G?

    The operating junction temperature range is -55°C to 125°C.

  5. What is the maximum instantaneous forward voltage of the MBRM130LT3G at 1.0 A and 25°C?

    The maximum instantaneous forward voltage is 0.38 V.

  6. What are the ESD ratings for the MBRM130LT3G?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  7. Is the MBRM130LT3G AEC-Q101 qualified?

    Yes, the MBRM130LT3G is AEC-Q101 qualified and PPAP capable.

  8. What is the thermal resistance, junction-to-ambient, of the MBRM130LT3G?

    The thermal resistance, junction-to-ambient, is 277 °C/W.

  9. What are the typical applications of the MBRM130LT3G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and “ORing” of multiple supply voltages, as well as portable and battery-powered products.

  10. Is the MBRM130LT3G still recommended for new designs?

    No, the MBRM130LT3G is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative parts.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:410 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
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Similar Products

Part Number MBRM130LT3G MBRS130LT3G MBRM110LT3G MBRM120LT3G MBRM130LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 10 V 20 V 30 V
Current - Average Rectified (Io) 1A 2A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 380 mV @ 1 A 445 mV @ 2 A 365 mV @ 1 A 450 mV @ 1 A 380 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 410 µA @ 30 V 1 mA @ 30 V 500 µA @ 10 V 400 µA @ 20 V 410 µA @ 30 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-214AA, SMB DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite SMB Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C

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