Overview
The MBRM130LT3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package provides a highly efficient, micro-miniature, and space-saving design, making it ideal for use in portable and battery-powered products. Despite being discontinued for new designs, it remains a significant component in existing applications due to its unique thermal performance and compact size.
Key Specifications
Symbol | Characteristic | Value | Unit |
---|---|---|---|
VRRM | Peak Repetitive Reverse Voltage | 30 | V |
IO | Average Rectified Forward Current (At Rated VR, TC = 135°C) | 1.0 | A |
IFRM | Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) | 2.0 | A |
IFSM | Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) | 50 | A |
Tstg | Storage Temperature | -55 to 150 | °C |
TJ | Operating Junction Temperature | -55 to 125 | °C |
VF | Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) | 0.38 | V |
IR | Maximum Instantaneous Reverse Current (TJ = 25°C, VR = 30 V) | 0.41 | mA |
Rtja | Thermal Resistance, Junction-to-Ambient | 277 | °C/W |
Key Features
- Low Profile: Maximum height of 1.1 mm, making it one of the lowest height profiles in the industry.
- Small Footprint: Footprint area of 8.45 mm², ideal for space-saving designs.
- Low VF: Provides higher efficiency and extends battery life.
- Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
- ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free Package: Compliant with lead-free requirements.
Applications
The MBRM130LT3G is typically used in various applications where performance and size are critical, such as:
- AC-DC and DC-DC converters.
- Reverse battery protection.
- “ORing” of multiple supply voltages.
- Portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
Q & A
- What is the maximum peak repetitive reverse voltage of the MBRM130LT3G?
The maximum peak repetitive reverse voltage is 30 V.
- What is the average rectified forward current rating of the MBRM130LT3G?
The average rectified forward current rating is 1.0 A at a rated VR and TC = 135°C.
- What is the non-repetitive peak surge current rating of the MBRM130LT3G?
The non-repetitive peak surge current rating is 50 A.
- What is the operating junction temperature range of the MBRM130LT3G?
The operating junction temperature range is -55°C to 125°C.
- What is the maximum instantaneous forward voltage of the MBRM130LT3G at 1.0 A and 25°C?
The maximum instantaneous forward voltage is 0.38 V.
- What are the ESD ratings for the MBRM130LT3G?
The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).
- Is the MBRM130LT3G AEC-Q101 qualified?
Yes, the MBRM130LT3G is AEC-Q101 qualified and PPAP capable.
- What is the thermal resistance, junction-to-ambient, of the MBRM130LT3G?
The thermal resistance, junction-to-ambient, is 277 °C/W.
- What are the typical applications of the MBRM130LT3G?
Typical applications include AC-DC and DC-DC converters, reverse battery protection, and “ORing” of multiple supply voltages, as well as portable and battery-powered products.
- Is the MBRM130LT3G still recommended for new designs?
No, the MBRM130LT3G is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative parts.