MBRM120LT1G
  • Share:

onsemi MBRM120LT1G

Manufacturer No:
MBRM120LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM120LT1G is a Schottky Power Rectifier produced by onsemi, utilizing the Schottky Barrier principle with a barrier metal and epitaxial construction. This design optimizes the forward voltage drop and reverse current tradeoff, making it highly efficient. The advanced packaging techniques result in a micro miniature, space-saving surface mount rectifier. The unique heatsink design of the POWERMITE package ensures thermal performance comparable to larger packages while being 50% smaller in footprint area and having one of the lowest height profiles in the industry, at less than 1.1 mm.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current IO 1.0 A
Peak Repetitive Forward Current IFRM 2.0 A
Non-Repetitive Peak Surge Current IFSM 50 A
Storage Temperature Tstg −55 to 150 °C
Operating Junction Temperature TJ −55 to 125 °C
Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) VF 0.45 V
Thermal Resistance, Junction-to-Ambient Rtja 277 °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm
  • Small Footprint: Footprint area of 8.45 mm²
  • Low VF: Provides higher efficiency and extends battery life
  • Supplied in 12 mm Tape and Reel
  • Low Thermal Resistance with direct thermal path of die on exposed cathode heat sink
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V)
  • AEC-Q101 Qualified and PPAP Capable
  • NRVB Prefix for automotive and other applications requiring unique site and control change requirements
  • All packages are Pb-Free

Applications

The MBRM120LT1G is ideal for use in portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards. Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages. It is also suitable for any application where performance and size are critical.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM120LT1G?

    The peak repetitive reverse voltage (VRRM) is 20 V.

  2. What is the average rectified forward current of the MBRM120LT1G?

    The average rectified forward current (IO) is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 1.0 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 1.0 A and 25°C is 0.45 V.

  4. What are the storage and operating junction temperature ranges for the MBRM120LT1G?

    The storage temperature range is −55 to 150°C, and the operating junction temperature range is −55 to 125°C.

  5. Is the MBRM120LT1G Pb-Free?
  6. What is the thermal resistance from junction to ambient for the MBRM120LT1G?

    The thermal resistance from junction to ambient (Rtja) is 277 °C/W.

  7. What are some typical applications of the MBRM120LT1G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'ORing' of multiple supply voltages, as well as use in portable and battery-powered products.

  8. Is the MBRM120LT1G qualified for automotive applications?
  9. What is the ESD rating of the MBRM120LT1G?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  10. What is the footprint area of the MBRM120LT1G?

    The footprint area is 8.45 mm².

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:400 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.50
259

Please send RFQ , we will respond immediately.

Same Series
MBRM120LT3G
MBRM120LT3G
DIODE SCHOTTKY 20V 1A POWERMITE
NRVBM120LT1G
NRVBM120LT1G
DIODE SCHOTTKY 20V 1A POWERMITE
NRVBM120LT3G
NRVBM120LT3G
DIODE SCHOTTKY 20V 1A POWERMITE

Similar Products

Part Number MBRM120LT1G MBRM120LT3G MBRM130LT1G MBRM110LT1G MBRM120ET1G MBRM120LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 30 V 10 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 450 mV @ 1 A 380 mV @ 1 A 365 mV @ 1 A 530 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 400 µA @ 20 V 400 µA @ 20 V 410 µA @ 30 V 500 µA @ 10 V 10 µA @ 20 V 400 µA @ 20 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -65°C ~ 150°C -

Related Product By Categories

PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC

Related Product By Brand

MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN