Overview
The FJV1845FMTF is a bipolar junction transistor (BJT) produced by onsemi, formerly known as Fairchild Semiconductor. This NPN epitaxial silicon transistor is designed for low-power surface mount applications and is housed in the SOT-23-3 (TO-236) package. It is suitable for general-purpose amplifier applications due to its robust electrical characteristics and compact packaging.
Key Specifications
| Parameter | Value |
|---|---|
| Configuration | NPN |
| Maximum Collector Emitter Breakdown Voltage | 120V |
| Maximum Collector Current | 50mA |
| Gain Bandwidth | 110MHz |
| Maximum Power Dissipation | 300mW |
| Maximum Operating Temperature | 150°C (TJ) |
| Minimum DC Current Gain | 200 @ 1mA, 6V |
| Package Type | SOT-23-3 (TO-236) |
| Packaging Quantity | 3000 (Tape and Reel) |
| RoHS Compliance | Compliant |
| Reach Status | Compliant |
Key Features
- Compact Packaging: The FJV1845FMTF is housed in the SOT-23-3 (TO-236) package, making it ideal for space-constrained applications.
- High Gain Bandwidth: With a gain bandwidth of 110MHz, this transistor is suitable for high-frequency applications.
- Low Power Consumption: It has a maximum power dissipation of 300mW, making it energy-efficient for low-power applications.
- Robust Electrical Characteristics: The transistor features a maximum collector emitter breakdown voltage of 120V and a minimum DC current gain of 200 @ 1mA, 6V.
- Environmental Compliance: The FJV1845FMTF is RoHS and Reach compliant, ensuring it meets environmental standards.
Applications
- General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high gain and low noise characteristics.
- Switching Circuits: Can be used in switching applications where high speed and low power consumption are required.
- Audio Amplifiers: Ideal for audio amplifier circuits where fidelity and low distortion are critical.
- Automotive and Industrial Control Systems: Can be used in control systems that require reliable and efficient transistor performance.
Q & A
- What is the configuration of the FJV1845FMTF transistor?
The FJV1845FMTF is an NPN epitaxial silicon transistor.
- What is the maximum collector emitter breakdown voltage of the FJV1845FMTF?
The maximum collector emitter breakdown voltage is 120V.
- What is the gain bandwidth of the FJV1845FMTF?
The gain bandwidth is 110MHz.
- What is the maximum power dissipation of the FJV1845FMTF?
The maximum power dissipation is 300mW.
- What is the package type of the FJV1845FMTF?
The FJV1845FMTF is housed in the SOT-23-3 (TO-236) package.
- Is the FJV1845FMTF RoHS compliant?
Yes, the FJV1845FMTF is RoHS compliant.
- What is the minimum DC current gain of the FJV1845FMTF?
The minimum DC current gain is 200 @ 1mA, 6V.
- What are the typical applications of the FJV1845FMTF?
The FJV1845FMTF is typically used in general-purpose amplifier applications, switching circuits, audio amplifiers, and automotive and industrial control systems.
- What is the maximum operating temperature of the FJV1845FMTF?
The maximum operating temperature is 150°C (TJ).
- How many units are typically packaged in a reel?
The packaging quantity is 3000 units per reel.[
