FFSP0865A
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onsemi FFSP0865A

Manufacturer No:
FFSP0865A
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 650V 13A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSP0865A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, part of their EliteSiC product line. This diode leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based diodes. Key benefits include no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. These features enable systems to achieve higher efficiency, faster operating frequencies, increased power density, reduced EMI, and a smaller overall system size and cost.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 650 V
Single Pulse Avalanche Energy (EAS) 49 mJ
Continuous Rectified Forward Current @ TC < 155°C (IF) 8 A
Continuous Rectified Forward Current @ TC < 135°C (IF) 13 A
Non-Repetitive Peak Forward Surge Current (IF, Max) @ TC = 25°C, 10 μs 750 A
Non-Repetitive Forward Surge Current (IF,SM) Half-Sine Pulse, tp = 8.3 ms 49 A
Repetitive Forward Surge Current (IF,RM) Half-Sine Pulse, tp = 8.3 ms 34 A
Power Dissipation (Ptot) @ TC = 25°C 98 W
Operating and Storage Temperature Range (TJ, TSTG) −55 to +175 °C
Thermal Resistance, Junction to Case (RθJC) 1.53 °C/W
Forward Voltage (VF) @ IF = 8 A, TC = 25°C 1.50 - 1.75 V
Reverse Current (IR) @ VR = 650 V, TC = 25°C − - 200 μA

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 49 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS (Switch-Mode Power Supplies)
  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Power Switching Circuits

Q & A

  1. What is the peak repetitive reverse voltage of the FFSP0865A?

    The peak repetitive reverse voltage (VRRM) is 650 V.

  2. What is the maximum junction temperature for the FFSP0865A?

    The maximum junction temperature is 175°C.

  3. What are the continuous rectified forward current ratings for the FFSP0865A at different temperatures?

    The continuous rectified forward current is 8 A at TC < 155°C and 13 A at TC < 135°C.

  4. Does the FFSP0865A have any reverse recovery or forward recovery characteristics?

    No, the FFSP0865A has no reverse recovery or forward recovery characteristics.

  5. Is the FFSP0865A RoHS compliant and free from hazardous materials?
  6. What are some typical applications for the FFSP0865A?

    Typical applications include general purpose use, SMPS, solar inverters, UPS, and power switching circuits.

  7. What is the thermal resistance from junction to case for the FFSP0865A?

    The thermal resistance from junction to case (RθJC) is 1.53 °C/W.

  8. What is the power dissipation rating for the FFSP0865A at different temperatures?

    The power dissipation is 98 W at TC = 25°C and 16 W at TC = 150°C.

  9. What is the forward voltage drop for the FFSP0865A at different temperatures?

    The forward voltage (VF) ranges from 1.50 to 1.75 V at IF = 8 A and TC = 25°C, and up to 2.40 V at IF = 8 A and TC = 175°C.

  10. What is the reverse current rating for the FFSP0865A at different temperatures?

    The reverse current (IR) is up to 200 μA at VR = 650 V and TC = 25°C, and up to 600 μA at VR = 650 V and TC = 175°C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):13A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:463pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSP0865A FFSP0865B FFSPF0865A FFSB0865A FFSD0865A FFSM0865A FFSP0465A FFSP0665A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 13A (DC) 10.1A (DC) 8A (DC) 15.4A (DC) 15A (DC) 9.6A (DC) 8.6A (DC) 8.8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.7 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 mA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 463pF @ 1V, 100kHz 336pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 258pF @ 1V, 100kHz 361pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220F-2FS D²PAK-3 (TO-263-3) D-PAK (TO-252) 4-PQFN (8x8) TO-220-2 TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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