FFSM0865A
  • Share:

onsemi FFSM0865A

Manufacturer No:
FFSM0865A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 650V 8A 4PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSM0865A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, part of their EliteSiC series. This diode leverages advanced SiC technology to offer superior switching performance, higher reliability, and enhanced thermal characteristics compared to traditional silicon-based diodes. It is designed to provide high efficiency, faster operating frequencies, increased power density, reduced EMI, and a smaller system size and cost. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications.

Key Specifications

ParameterValueUnit
VRRM (Peak Repetitive Reverse Voltage)650V
IF (Continuous Rectified Forward Current @ TC < 145°C)8A
IF (Continuous Rectified Forward Current @ TC < 135°C)9.6A
IFSM (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs)550A
IFSM (Non-Repetitive Peak Forward Surge Current @ TC = 150°C, 10 μs)520A
IFSM (Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms)49A
Ptot (Power Dissipation @ TC = 25°C)64W
Ptot (Power Dissipation @ TC = 150°C)11W
TJ (Operating and Storage Temperature Range)-55 to +175°C
VF (Forward Voltage @ IF = 8 A, TC = 25°C)1.50 - 1.75V
IR (Reverse Current @ VR = 650 V, TC = 25°C)200 μA
RJC (Thermal Resistance, Junction to Case, Max)2.35 °C/W

Key Features

  • No reverse recovery current and no forward recovery, ensuring efficient switching.
  • Temperature-independent switching characteristics.
  • High surge current capacity.
  • Positive temperature coefficient.
  • Ease of paralleling.
  • Avalanche rated with 37 mJ single pulse avalanche energy.
  • High thermal performance with a maximum junction temperature of 175°C.
  • Pb-free, halogen-free, and RoHS compliant.

Applications

  • General purpose applications.
  • Switch-Mode Power Supplies (SMPS).
  • Solar Inverters.
  • Uninterruptible Power Supplies (UPS).
  • Power switching circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the FFSM0865A?
    The peak repetitive reverse voltage (VRRM) is 650 V.
  2. What is the continuous rectified forward current at TC < 145°C?
    The continuous rectified forward current at TC < 145°C is 8 A.
  3. What is the maximum junction temperature of the FFSM0865A?
    The maximum junction temperature is 175°C.
  4. Is the FFSM0865A RoHS compliant?
    Yes, the FFSM0865A is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the FFSM0865A?
    The typical applications include SMPS, solar inverters, UPS, and power switching circuits.
  6. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RJC) is 2.35 °C/W.
  7. Does the FFSM0865A have reverse recovery current?
    No, the FFSM0865A does not have reverse recovery current.
  8. What is the non-repetitive peak forward surge current at TC = 25°C?
    The non-repetitive peak forward surge current at TC = 25°C is 550 A for a 10 μs pulse.
  9. What is the power dissipation at TC = 25°C?
    The power dissipation at TC = 25°C is 64 W.
  10. What is the forward voltage at IF = 8 A and TC = 25°C?
    The forward voltage at IF = 8 A and TC = 25°C is between 1.50 V and 1.75 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9.6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:463pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:4-PowerTSFN
Supplier Device Package:4-PQFN (8x8)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$2.62
144

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number FFSM0865A FFSM0865B FFSP0865A FFSB0865A FFSD0865A FFSM0465A FFSM0665A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 9.6A (DC) 11.6A (DC) 13A (DC) 15.4A (DC) 15A (DC) 4A 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.7 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 463pF @ 1V, 100kHz 336pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 247pF @ 1V, 100kHz 365pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 4-PowerTSFN 4-PowerTSFN TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN 4-PowerTSFN
Supplier Device Package 4-PQFN (8x8) 4-PQFN (8x8) TO-220-2 D²PAK-3 (TO-263-3) D-PAK (TO-252) 4-PQFN (8x8) 4-PQFN (8x8)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT