FFSM0865A
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onsemi FFSM0865A

Manufacturer No:
FFSM0865A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SBD 650V 8A 4PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSM0865A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi, part of their EliteSiC series. This diode leverages advanced SiC technology to offer superior switching performance, higher reliability, and enhanced thermal characteristics compared to traditional silicon-based diodes. It is designed to provide high efficiency, faster operating frequencies, increased power density, reduced EMI, and a smaller system size and cost. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications.

Key Specifications

ParameterValueUnit
VRRM (Peak Repetitive Reverse Voltage)650V
IF (Continuous Rectified Forward Current @ TC < 145°C)8A
IF (Continuous Rectified Forward Current @ TC < 135°C)9.6A
IFSM (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs)550A
IFSM (Non-Repetitive Peak Forward Surge Current @ TC = 150°C, 10 μs)520A
IFSM (Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms)49A
Ptot (Power Dissipation @ TC = 25°C)64W
Ptot (Power Dissipation @ TC = 150°C)11W
TJ (Operating and Storage Temperature Range)-55 to +175°C
VF (Forward Voltage @ IF = 8 A, TC = 25°C)1.50 - 1.75V
IR (Reverse Current @ VR = 650 V, TC = 25°C)200 μA
RJC (Thermal Resistance, Junction to Case, Max)2.35 °C/W

Key Features

  • No reverse recovery current and no forward recovery, ensuring efficient switching.
  • Temperature-independent switching characteristics.
  • High surge current capacity.
  • Positive temperature coefficient.
  • Ease of paralleling.
  • Avalanche rated with 37 mJ single pulse avalanche energy.
  • High thermal performance with a maximum junction temperature of 175°C.
  • Pb-free, halogen-free, and RoHS compliant.

Applications

  • General purpose applications.
  • Switch-Mode Power Supplies (SMPS).
  • Solar Inverters.
  • Uninterruptible Power Supplies (UPS).
  • Power switching circuits.

Q & A

  1. What is the peak repetitive reverse voltage of the FFSM0865A?
    The peak repetitive reverse voltage (VRRM) is 650 V.
  2. What is the continuous rectified forward current at TC < 145°C?
    The continuous rectified forward current at TC < 145°C is 8 A.
  3. What is the maximum junction temperature of the FFSM0865A?
    The maximum junction temperature is 175°C.
  4. Is the FFSM0865A RoHS compliant?
    Yes, the FFSM0865A is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the FFSM0865A?
    The typical applications include SMPS, solar inverters, UPS, and power switching circuits.
  6. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RJC) is 2.35 °C/W.
  7. Does the FFSM0865A have reverse recovery current?
    No, the FFSM0865A does not have reverse recovery current.
  8. What is the non-repetitive peak forward surge current at TC = 25°C?
    The non-repetitive peak forward surge current at TC = 25°C is 550 A for a 10 μs pulse.
  9. What is the power dissipation at TC = 25°C?
    The power dissipation at TC = 25°C is 64 W.
  10. What is the forward voltage at IF = 8 A and TC = 25°C?
    The forward voltage at IF = 8 A and TC = 25°C is between 1.50 V and 1.75 V.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9.6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:463pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:4-PowerTSFN
Supplier Device Package:4-PQFN (8x8)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSM0865A FFSM0865B FFSP0865A FFSB0865A FFSD0865A FFSM0465A FFSM0665A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 9.6A (DC) 11.6A (DC) 13A (DC) 15.4A (DC) 15A (DC) 4A 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A 1.7 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 8 A 1.75 V @ 4 A 1.75 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 463pF @ 1V, 100kHz 336pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 463pF @ 1V, 100kHz 247pF @ 1V, 100kHz 365pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 4-PowerTSFN 4-PowerTSFN TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN 4-PowerTSFN
Supplier Device Package 4-PQFN (8x8) 4-PQFN (8x8) TO-220-2 D²PAK-3 (TO-263-3) D-PAK (TO-252) 4-PQFN (8x8) 4-PQFN (8x8)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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