FDMS86150A
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onsemi FDMS86150A

Manufacturer No:
FDMS86150A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
FET 100V 4.85 MOHM PQFN56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86150A is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The MOSFET is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of high-efficiency applications.

Key Specifications

ParameterValue
VDS (Max)100 V
ID (Max)60 A
RDS(on) (Max) @ VGS = 10 V4.85 mΩ
RDS(on) (Max) @ VGS = 6 V7.8 mΩ
VGS (Max)±20 V
VGS(th) (Max)4 V
PD (Max)187 W
TJ (Max)175°C
Package TypePQFN-8
MSL Type1

Key Features

  • Advanced PowerTrench® process for low on-state resistance and high efficiency.
  • Shielded Gate MOSFET Technology for improved performance.
  • Extended TJ rating to 175°C for enhanced reliability.
  • MSL1 robust package design for reliability and durability.
  • 100% UIL tested for quality assurance.
  • RoHS Compliant, ensuring environmental sustainability.

Applications

  • DC-DC power supplies.
  • Motor driver applications.
  • Other high-efficiency power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDMS86150A?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the maximum drain current (ID) of the FDMS86150A?
    The maximum drain current (ID) is 60 A.
  3. What is the on-state resistance (RDS(on)) at VGS = 10 V?
    The on-state resistance (RDS(on)) at VGS = 10 V is 4.85 mΩ.
  4. What is the maximum junction temperature (TJ) of the FDMS86150A?
    The maximum junction temperature (TJ) is 175°C.
  5. Is the FDMS86150A RoHS Compliant?
    Yes, the FDMS86150A is RoHS Compliant.
  6. What is the package type of the FDMS86150A?
    The package type is PQFN-8.
  7. What are some typical applications of the FDMS86150A?
    Typical applications include DC-DC power supplies and motor driver applications.
  8. What technology is used in the FDMS86150A?
    The FDMS86150A uses the advanced PowerTrench® process with Shielded Gate technology.
  9. Is the FDMS86150A MSL1 compliant?
    Yes, the FDMS86150A has an MSL1 robust package design.
  10. Has the FDMS86150A undergone UIL testing?
    Yes, the FDMS86150A has been 100% UIL tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4665 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta), 113W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
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