Overview
The ECH8697R-TL-W is a dual N-Channel power MOSFET produced by onsemi, designed for applications involving 1-2 cells Lithium-ion battery protection. This device is characterized by its low on-state resistance, making it suitable for power switches in portable devices. The MOSFET is packaged in a SOT-28FL (ECH8) case, which is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 24 | V |
| Gate to Source Voltage (VGSS) | ±12.5 | V |
| Drain Current (DC) (ID) | 10 | A |
| Drain Current (Pulse) (IDP) | 60 | A (PW ≤ 10 μs, duty cycle ≤ 1%) |
| Power Dissipation (PD) | 1.5 | W (surface mounted on ceramic substrate) |
| Total Dissipation (PT) | 1.6 | W (surface mounted on ceramic substrate) |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -55 to +150 | °C |
| Static Drain to Source On-State Resistance (RDS(on)) at VGS = 4.5 V, ID = 5 A | 7.4 - 9.3 - 11.6 | mΩ |
| Junction to Ambient Thermal Resistance (RθJA) | 83.3 | °C/W |
Key Features
- Low On-State Resistance
- 2.5 V Drive Capability
- Common-Drain Type
- ESD Diode-Protected Gate
- Built-in Gate Protection Resistor
- Pb-free and RoHS Compliant
Applications
- 1-2 cells Lithium-ion Battery Charging and Discharging Switch
- Power switches for portable machines
Q & A
- What is the maximum drain to source voltage (VDSS) of the ECH8697R-TL-W?
The maximum drain to source voltage (VDSS) is 24 V. - What is the maximum drain current (ID) for the ECH8697R-TL-W?
The maximum drain current (ID) is 10 A. - What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V and ID = 5 A?
The typical on-state resistance (RDS(on)) is 9.3 mΩ. - Is the ECH8697R-TL-W Pb-free and RoHS compliant?
Yes, the ECH8697R-TL-W is Pb-free and RoHS compliant. - What is the junction temperature (Tj) limit for the ECH8697R-TL-W?
The junction temperature (Tj) limit is 150°C. - What is the storage temperature range for the ECH8697R-TL-W?
The storage temperature range is -55°C to +150°C. - What is the typical gate threshold voltage (VGS(th))?
The typical gate threshold voltage (VGS(th)) is 0.5 to 1.3 V. - What is the maximum power dissipation (PD) for the ECH8697R-TL-W when surface mounted on a ceramic substrate?
The maximum power dissipation (PD) is 1.5 W. - What are the typical applications of the ECH8697R-TL-W?
The typical applications include 1-2 cells Lithium-ion battery charging and discharging switches and power switches for portable machines. - What package type is the ECH8697R-TL-W available in?
The ECH8697R-TL-W is available in a SOT-28FL (ECH8) package.
