Overview
The D45H8G is a PNP bipolar power transistor manufactured by onsemi. It is part of the D45H series, which includes complementary silicon power transistors designed for general-purpose power amplification and switching applications. This transistor is housed in a TO-220 package and is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic designs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | ICM | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 2.0 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.8 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 275 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc |
| Gain Bandwidth Product | fT | 40 | MHz |
Key Features
- Low Collector-Emitter Saturation Voltage: The D45H8G has a low VCE(sat) of 1.0 Vdc, which is beneficial for reducing power losses in switching applications.
- Fast Switching Speeds: This transistor features fast switching times, including delay, rise, and fall times, making it suitable for high-frequency applications.
- Complementary Pairs: The D45H series includes both NPN (D44H) and PNP (D45H) transistors, which simplifies circuit design by allowing for complementary pairs.
- Pb-Free and RoHS Compliant: The D45H8G is lead-free and complies with RoHS regulations, making it environmentally friendly and suitable for modern electronic designs.
Applications
- General-Purpose Power Amplification: The D45H8G can be used in various power amplification stages due to its high current and voltage handling capabilities.
- Switching Regulators and Converters: Its fast switching speeds and low saturation voltage make it ideal for use in switching regulators and converters.
- Power Amplifiers: This transistor is suitable for output or driver stages in power amplifiers due to its high gain bandwidth product and fast switching characteristics.
Q & A
- What is the collector-emitter voltage rating of the D45H8G?
The collector-emitter voltage (VCEO) rating of the D45H8G is 60 Vdc.
- What is the maximum continuous collector current of the D45H8G?
The maximum continuous collector current (IC) of the D45H8G is 10 Adc.
- What is the thermal resistance from junction to case for the D45H8G?
The thermal resistance from junction to case (RJC) for the D45H8G is 1.8 °C/W.
- Is the D45H8G Pb-free and RoHS compliant?
Yes, the D45H8G is Pb-free and RoHS compliant.
- What is the gain bandwidth product of the D45H8G?
The gain bandwidth product (fT) of the D45H8G is 40 MHz.
- What are the typical applications of the D45H8G?
The D45H8G is typically used in general-purpose power amplification, switching regulators, converters, and power amplifiers.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 275 °C.
- What is the collector-emitter saturation voltage of the D45H8G?
The collector-emitter saturation voltage (VCE(sat)) of the D45H8G is 1.0 Vdc.
- What is the base-emitter saturation voltage of the D45H8G?
The base-emitter saturation voltage (VBE(sat)) of the D45H8G is 1.5 Vdc.
- What is the operating and storage junction temperature range of the D45H8G?
The operating and storage junction temperature range (TJ, Tstg) of the D45H8G is -55 to +150 °C.
