D44H11
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Fairchild Semiconductor D44H11

Manufacturer No:
D44H11
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Description:
TRANS NPN 80V 10A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The D44H11 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for use in power amplifier, regulator, and switching circuits where high speed and reliability are crucial. The D44H11 is housed in a TO-220-3 package, making it suitable for through-hole mounting. With its robust specifications and wide range of applications, it is a popular choice in various electronic systems.

Key Specifications

Parameter Value
Transistor Type NPN
Maximum Collector Current (Ic max) 10 A
Maximum Collector-Emitter Voltage (Vce) 80 V
Maximum Collector-Base Voltage (Vcb) 90 V
Maximum Emitter-Base Voltage (Veb) 5 V
Collector-Emitter Saturation Voltage (Vce(sat)) 1 V @ 400mA, 8A
DC Current Gain (hFE) (Min) 40 @ 4A, 1V
Maximum Power Dissipation (Pc) 50 W
Transition Frequency (ft) 25 MHz
Maximum Operating Junction Temperature (Tj) 150 °C
Package TO-220-3
Mounting Type Through Hole

Key Features

  • High Current Capability: The D44H11 can handle a maximum collector current of 10 A, making it suitable for high-power applications.
  • High Voltage Handling: With a maximum collector-emitter voltage of 80 V and collector-base voltage of 90 V, this transistor is robust against voltage spikes.
  • Low Saturation Voltage: The transistor has a low Vce(sat) of 1 V at 400mA and 8A, reducing power losses in switching applications.
  • High Gain: A minimum DC current gain (hFE) of 40 ensures reliable amplification.
  • High Transition Frequency: A transition frequency of 25 MHz makes it suitable for high-speed switching and amplifier circuits.
  • High Operating Temperature: The transistor can operate up to a junction temperature of 150 °C, enhancing its reliability in harsh environments.

Applications

  • Power Amplifiers: The D44H11 is ideal for power amplifier circuits due to its high current and voltage handling capabilities.
  • Voltage Regulators: Its low saturation voltage and high gain make it suitable for voltage regulator applications.
  • Switching Circuits: The transistor's high transition frequency and low power losses in saturation make it a good choice for high-speed switching circuits.
  • Automotive Systems: The D44H11 can be used in various automotive applications due to its compliance with high-temperature and high-voltage requirements.

Q & A

  1. What is the maximum collector current of the D44H11 transistor?

    The maximum collector current of the D44H11 transistor is 10 A.

  2. What is the maximum collector-emitter voltage of the D44H11 transistor?

    The maximum collector-emitter voltage of the D44H11 transistor is 80 V.

  3. What is the package type of the D44H11 transistor?

    The D44H11 transistor is housed in a TO-220-3 package.

  4. What is the maximum operating junction temperature of the D44H11 transistor?

    The maximum operating junction temperature of the D44H11 transistor is 150 °C.

  5. What is the transition frequency of the D44H11 transistor?

    The transition frequency of the D44H11 transistor is 25 MHz.

  6. What are the typical applications of the D44H11 transistor?

    The D44H11 transistor is typically used in power amplifiers, voltage regulators, switching circuits, and automotive systems.

  7. What is the collector-emitter saturation voltage of the D44H11 transistor?

    The collector-emitter saturation voltage (Vce(sat)) of the D44H11 transistor is 1 V at 400mA and 8A.

  8. What is the DC current gain (hFE) of the D44H11 transistor?

    The minimum DC current gain (hFE) of the D44H11 transistor is 40 at 4A and 1V.

  9. Is the D44H11 transistor RoHS compliant?

    Yes, the D44H11 transistor is RoHS compliant.

  10. What is the maximum power dissipation of the D44H11 transistor?

    The maximum power dissipation of the D44H11 transistor is 50 W.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 1V
Power - Max:2 W
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Similar Products

Part Number D44H11 D44H11G D45H11 D44C11
Manufacturer Fairchild Semiconductor onsemi STMicroelectronics NTE Electronics, Inc
Product Status Obsolete Active Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 10 A 10 A 10 A 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A 500mV @ 50mA, 1A
Current - Collector Cutoff (Max) 10µA 10µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V 40 @ 4A, 1V 40 @ 4A, 1V 100 @ 200mA, 1V
Power - Max 2 W 2 W 50 W 30 W
Frequency - Transition 50MHz 50MHz - 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220 TO-220 TO-220

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