CPH3462-TL-W
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onsemi CPH3462-TL-W

Manufacturer No:
CPH3462-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 1A 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The CPH3462-TL-W is a single N-Channel Power MOSFET manufactured by ON Semiconductor. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The MOSFET is packaged in a compact SOT23 case, making it suitable for space-constrained designs. It features enhanced channel characteristics and is protected against electrostatic discharge (ESD), ensuring reliability in various operating conditions.

Key Specifications

ParameterValue
Type of TransistorN-MOSFET
PolarizationUnipolar
Drain-Source Voltage (Vds)100V
Drain Current (Id)1A
Power Dissipation (Pd)1W
CaseSOT23
Gate-Source Voltage (Vgs)±20V
On-State Resistance (Rds(on))785mΩ
MountingSMD
Kind of PackageReel, Tape
Kind of ChannelEnhanced
VersionESD Protected

Key Features

  • Low on-state resistance of 785mΩ, reducing power losses and improving efficiency.
  • High drain current of 1A, suitable for applications requiring moderate to high current handling.
  • Compact SOT23 package, ideal for space-constrained designs.
  • Enhanced channel characteristics for better performance.
  • ESD protection to ensure reliability against electrostatic discharge.

Applications

The CPH3462-TL-W is versatile and can be used in a variety of applications, including:

  • Power switching and amplification in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control systems and motor drives.
  • Portable electronics where space and power efficiency are critical.

Q & A

  1. What is the drain-source voltage rating of the CPH3462-TL-W?
    The drain-source voltage rating is 100V.
  2. What is the maximum drain current of the CPH3462-TL-W?
    The maximum drain current is 1A.
  3. What is the power dissipation of the CPH3462-TL-W?
    The power dissipation is 1W.
  4. What type of package does the CPH3462-TL-W come in?
    The CPH3462-TL-W comes in a SOT23 package.
  5. Is the CPH3462-TL-W protected against electrostatic discharge?
    Yes, the CPH3462-TL-W is ESD protected.
  6. What is the on-state resistance of the CPH3462-TL-W?
    The on-state resistance is 785mΩ.
  7. What is the gate-source voltage range for the CPH3462-TL-W?
    The gate-source voltage range is ±20V.
  8. What kind of channel does the CPH3462-TL-W have?
    The CPH3462-TL-W has an enhanced channel.
  9. What are some common applications for the CPH3462-TL-W?
    Common applications include power switching, automotive systems, industrial control systems, and portable electronics.
  10. How is the CPH3462-TL-W mounted?
    The CPH3462-TL-W is mounted using Surface Mount Technology (SMD).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:785mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:3.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number CPH3462-TL-W CPH3362-TL-W CPH3461-TL-W
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 250 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 700mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 785mOhm @ 1A, 10V 1.7Ohm @ 700mA, 10V 6.5Ohm @ 170mA, 4.5V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V 3.7 nC @ 10 V 2.1 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±10V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 20 V 142 pF @ 20 V 140 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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