BD237G
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onsemi BD237G

Manufacturer No:
BD237G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 2A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD237G is an NPN bipolar power transistor manufactured by onsemi. It is designed for medium power applications, particularly in the range of 5.0 to 10 W audio amplifiers and drivers. This transistor is part of a complementary set that includes the BD234 (PNP) and BD238 (PNP) devices, making it suitable for use in complementary or quasi-complementary circuits.

The BD237G is housed in a TO-225-3 package and is available in Pb-free versions, making it compliant with current environmental regulations.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 100 V
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) - Continuous 2 A
Collector Current (IC) - Pulse 6 A
Collector Dissipation (PC) 25 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C
DC Current Gain (hFE) 40 (Min) @ IC = 0.15 A
Collector-Emitter Saturation Voltage (VCE(sat)) 0.6 V
Base-Emitter ON Voltage (VBE(on)) 1.3 V
Current Gain Bandwidth Product (fT) 3 MHz

Key Features

  • High Current Capability: The BD237G can handle a continuous collector current of 2 A and a pulse current of 6 A, making it suitable for medium power applications.
  • High Voltage Handling: With a collector-emitter voltage rating of 80 V, this transistor is robust and can handle high voltage requirements.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 0.6 V, which is beneficial for reducing power losses in switching applications.
  • Complementary Devices: The BD237G is part of a set of complementary transistors, including the BD234 and BD238, which are useful for designing push-pull amplifiers and other complementary circuits.
  • Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.

Applications

  • Audio Amplifiers: Designed for use in 5.0 to 10 W audio amplifiers and drivers.
  • Switching Applications: Suitable for various switching applications due to its low saturation voltage and high current handling capability.
  • Power Supplies: Can be used in power supply circuits that require medium power handling.
  • Motor Control: Applicable in motor control circuits where high current and voltage handling are necessary.

Q & A

  1. What is the maximum collector current of the BD237G transistor?

    The maximum continuous collector current is 2 A, and the maximum pulse collector current is 6 A.

  2. What is the collector-emitter voltage rating of the BD237G?

    The collector-emitter voltage rating is 80 V.

  3. What is the typical DC current gain (hFE) of the BD237G?

    The minimum DC current gain (hFE) is 40 at IC = 0.15 A.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the BD237G?

    The collector-emitter saturation voltage is 0.6 V.

  5. Is the BD237G available in Pb-free packages?
  6. What are the complementary devices to the BD237G?

    The complementary devices are the BD234 (PNP) and BD238 (PNP).

  7. What is the junction temperature range of the BD237G?

    The junction temperature range is up to 150°C.

  8. What is the storage temperature range of the BD237G?

    The storage temperature range is from -65°C to 150°C.

  9. What is the current gain bandwidth product (fT) of the BD237G?

    The current gain bandwidth product is 3 MHz.

  10. In what type of package is the BD237G available?

    The BD237G is available in a TO-225-3 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 2V
Power - Max:25 W
Frequency - Transition:3MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number BD237G BD238G BD137G BD234G BD237
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Obsolete Active Active Active
Transistor Type NPN PNP NPN PNP NPN
Current - Collector (Ic) (Max) 2 A 2 A 1.5 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 500mV @ 50mA, 500mA 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO) 100nA (ICBO) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 25 @ 1A, 2V 25 @ 1A, 2V
Power - Max 25 W 25 W 1.25 W 25 W 25 W
Frequency - Transition 3MHz 3MHz - 3MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 SOT-32-3

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