Overview
The BCP69T1G is a PNP Silicon Epitaxial Transistor manufactured by ON Semiconductor. It is designed for use in low voltage, high current applications. The transistor is housed in the SOT-223 package, which is suitable for medium power surface mount applications. This package ensures level mounting, improved thermal conduction, and allows for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -20 | Vdc |
| Collector-Base Voltage | VCBO | -25 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current | IC | -1.0 | A |
| Total Power Dissipation @ TA = 25°C | PD | 1.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -65 to 150 | °C |
| Collector-Emitter Breakdown Voltage (IC = -100 μAdc, IE = 0) | V(BR)CES | -25 | Vdc |
| Collector-Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0) | V(BR)CEO | -20 | Vdc |
| Emitter-Base Breakdown Voltage (IE = -10 μAdc, IC = 0) | V(BR)EBO | -5.0 | Vdc |
| Collector-Base Cutoff Current (VCB = -25 Vdc, IE = 0) | ICBO | -10 | μAdc |
| Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IC = 0) | IEBO | -10 | μAdc |
| DC Current Gain (IC = -500 mA, VCE = 1 V) | hFE | 85 | |
| Collector-Emitter Saturation Voltage (IC = -1 A, IB = 100 mA) | VCE(sat) | 0.5 | V |
| Base-Emitter On Voltage (IC = -1 A, VCE = 1 V) | VBE(on) | 1.0 | V |
| Gain Bandwidth Product | fT | 60 | MHz |
Key Features
- High Current Capability: The BCP69T1G can handle a collector current of up to -1.0 A, making it suitable for high current applications.
- SOT-223 Package: The transistor is housed in the SOT-223 package, which is designed for medium power surface mount applications. This package ensures level mounting, improved thermal conduction, and allows for visual inspection of soldered joints.
- Thermal Stress Absorption: The formed leads of the SOT-223 package absorb thermal stress during soldering, eliminating the possibility of damage to the die.
- AEC-Q101 Qualified and PPAP Capable: The transistor is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive and other demanding applications.
- RoHS Compliant: The BCP69T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High Gain Bandwidth Product: The transistor has a gain bandwidth product of 60 MHz, which is beneficial for high-frequency applications.
Applications
- Low Voltage, High Current Applications: The BCP69T1G is designed for use in applications that require low voltage and high current, such as power amplifiers, switching circuits, and motor control systems.
- Automotive Applications: With its AEC-Q101 qualification and PPAP capability, this transistor is suitable for use in automotive systems where reliability and robustness are critical.
- Surface Mount Applications: The SOT-223 package makes it ideal for surface mount technology (SMT) applications, where space efficiency and ease of assembly are important.
- General Purpose Amplification: The transistor can be used in various general-purpose amplification circuits due to its high current gain and low saturation voltage.
Q & A
- What is the maximum collector current of the BCP69T1G transistor?
The maximum collector current of the BCP69T1G transistor is -1.0 A.
- What package type is the BCP69T1G transistor housed in?
The BCP69T1G transistor is housed in the SOT-223 package.
- What is the maximum collector-emitter breakdown voltage of the BCP69T1G transistor?
The maximum collector-emitter breakdown voltage is -20 Vdc.
- Is the BCP69T1G transistor RoHS compliant?
Yes, the BCP69T1G transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the gain bandwidth product of the BCP69T1G transistor?
The gain bandwidth product of the BCP69T1G transistor is 60 MHz.
- What are the operating and storage temperature ranges for the BCP69T1G transistor?
The operating and storage temperature ranges are -65°C to 150°C.
- Is the BCP69T1G transistor suitable for automotive applications?
Yes, the BCP69T1G transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the maximum collector-emitter saturation voltage of the BCP69T1G transistor?
The maximum collector-emitter saturation voltage is 0.5 V at IC = -1 A and IB = 100 mA.
- Can the BCP69T1G transistor be soldered using wave or reflow soldering?
Yes, the SOT-223 package of the BCP69T1G transistor can be soldered using wave or reflow soldering.
- What is the minimum DC current gain of the BCP69T1G transistor?
The minimum DC current gain (hFE) is 85 at IC = -500 mA and VCE = 1 V.
