Overview
The BCP68T1G is an NPN Silicon Epitaxial Transistor designed and manufactured by onsemi. This transistor is optimized for use in low voltage, high current applications. It is housed in the SOT−223 package, which is suitable for medium power surface mount applications. The SOT−223 package ensures level mounting, improving thermal conduction and allowing for visual inspection of soldered joints. The formed leads of the package absorb thermal stress during soldering, preventing damage to the die.
Key Specifications
| Characteristics | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC = 100 μAdc, IE = 0) | V(BR)CES | 25 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) | V(BR)CEO | 20 | - | - | Vdc |
| Emitter-Base Breakdown Voltage (IE = 10 μAdc, IC = 0) | V(BR)EBO | 5.0 | - | - | Vdc |
| Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) | ICBO | - | - | 10 μAdc | - |
| Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) | IEBO | - | - | 10 μAdc | - |
| DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) | - | - | - | - | - |
| DC Current Gain (IC = 500 mAdc, VCE = 1.0 Vdc) | - | - | - | - | - |
Key Features
- High Current Capability: Designed for low voltage, high current applications.
- SOT−223 Package: Suitable for medium power surface mount applications. The package can be soldered using wave or reflow methods.
- Thermal Conduction and Solder Joint Inspection: The SOT−223 package ensures level mounting, improving thermal conduction and allowing visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing damage to the die.
- PNP Complement: The PNP complement of the BCP68T1G is the BCP69T1.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The BCP68T1G is suitable for a variety of applications, including:
- Low voltage, high current switching and amplification.
- Automotive systems requiring AEC-Q101 qualification.
- Surface mount applications where medium power handling is necessary.
- General-purpose electronic circuits requiring high current gain and low voltage operation.
Q & A
- What is the BCP68T1G transistor used for?
The BCP68T1G is used in low voltage, high current applications, such as switching and amplification in various electronic circuits.
- What package type is the BCP68T1G housed in?
The BCP68T1G is housed in the SOT−223 package, designed for medium power surface mount applications.
- What are the key features of the SOT−223 package?
The SOT−223 package ensures level mounting, improves thermal conduction, allows visual inspection of soldered joints, and absorbs thermal stress during soldering.
- Is the BCP68T1G AEC-Q101 qualified?
- Is the BCP68T1G environmentally compliant?
- What is the collector-emitter breakdown voltage of the BCP68T1G?
The collector-emitter breakdown voltage (V(BR)CES) is 25 Vdc when IC = 100 μAdc and IE = 0.
- What is the emitter-base breakdown voltage of the BCP68T1G?
The emitter-base breakdown voltage (V(BR)EBO) is 5.0 Vdc when IE = 10 μAdc and IC = 0.
- What is the typical DC current gain of the BCP68T1G?
The DC current gain varies depending on the collector current and VCE. For example, at IC = 5.0 mAdc and VCE = 10 Vdc, the current gain is specified in the datasheet.
- Can the BCP68T1G be used in automotive applications?
- What is the PNP complement of the BCP68T1G?
The PNP complement of the BCP68T1G is the BCP69T1.
