Overview
The NSVBCP69T1G is a PNP silicon epitaxial transistor designed and manufactured by onsemi. This device is optimized for low voltage, high current applications and is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The transistor is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other demanding applications. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -20 | Vdc |
| Collector-Base Voltage | VCBO | -25 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current | IC | -1.0 | Adc |
| Total Power Dissipation @ TA = 25°C | PD | 1.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -65 to 150 | °C |
| Thermal Resistance - Junction-to-Ambient (Surface Mounted) | RJA | 83.3 | °C/W |
| Lead Temperature for Soldering | TL | 260 | °C |
| DC Current Gain (IC = -1.0 Adc, VCE = -1.0 Vdc) | hFE | 50 - 375 | |
| Collector-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) | VCE(sat) | -0.5 | Vdc |
| Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) | VBE(on) | -1.0 | Vdc |
Key Features
- High Current Capability: IC = -1.0 A
- SOT-223 package suitable for medium power surface mount applications
- SOT-223 package ensures level mounting, improved thermal conduction, and allows visual inspection of soldered joints
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
- NSV prefix for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- NPN complement is BCP68
Applications
The NSVBCP69T1G transistor is designed for use in various low voltage, high current applications. These include:
- Automotive systems requiring high reliability and compliance with automotive standards
- Audio amplifiers and other high current audio applications
- Power switching and control circuits
- General-purpose high current amplification
Q & A
- What is the maximum collector current of the NSVBCP69T1G transistor?
The maximum collector current is -1.0 A. - What is the package type of the NSVBCP69T1G transistor?
The transistor is housed in the SOT-223 package. - Is the NSVBCP69T1G transistor AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable. - What is the operating temperature range of the NSVBCP69T1G transistor?
The operating and storage temperature range is -65 to 150°C. - Is the NSVBCP69T1G transistor Pb-free and RoHS compliant?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the thermal resistance - junction-to-ambient of the NSVBCP69T1G transistor?
The thermal resistance - junction-to-ambient is 83.3°C/W. - What is the lead temperature for soldering the NSVBCP69T1G transistor?
The lead temperature for soldering is 260°C. - What is the DC current gain of the NSVBCP69T1G transistor at IC = -1.0 Adc and VCE = -1.0 Vdc?
The DC current gain (hFE) ranges from 50 to 375. - What is the collector-emitter saturation voltage of the NSVBCP69T1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.5 Vdc. - What is the base-emitter on voltage of the NSVBCP69T1G transistor?
The base-emitter on voltage (VBE(on)) is -1.0 Vdc.
