BC817-25LT3H
  • Share:

onsemi BC817-25LT3H

Manufacturer No:
BC817-25LT3H
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 GP XSTR NPN 45V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25LT3H is a general-purpose NPN bipolar transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications, making it versatile for a wide range of electronic circuits. It is housed in the SOT-23 (TO-236) package, which is compact and suitable for surface mount technology (SMT) assembly. The BC817-25LT3H is part of the BC817 series, known for its reliability and performance in various electronic systems.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 500 mA
Base Current IB 50 mA
DC Current Gain (hFE) hFE 160 - 400 -
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V
Base-Emitter On Voltage VBE(on) 1.2 V
Transition Frequency fT 100 MHz
Maximum Power Dissipation PD 300 mW
Operating Junction Temperature TJ -55 to +150 °C

Key Features

  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
  • High DC Current Gain (hFE): Ranges from 160 to 400, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): 0.7 V, which is beneficial for reducing power losses in switching circuits.
  • High Transition Frequency (fT): 100 MHz, suitable for high-frequency applications.
  • Compact SOT-23 Package: Ideal for surface mount technology and space-constrained designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • LED Dimmers or Flashers: Can be used to control LED brightness and flashing patterns.
  • Switching Applications: Suitable for high-frequency switching due to its low VCE(sat) and high transition frequency.
  • Preamplifier for Power Amplifier: Can be used as a preamplifier stage in audio or other signal amplification circuits.
  • High Frequency Switching: Ideal for applications requiring fast switching times and high frequency operation.
  • Modulator and Demodulator for RF Frequency: Can be used in RF circuits for modulation and demodulation purposes.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817-25LT3H transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the continuous collector current (IC) rating of the BC817-25LT3H transistor?

    The continuous collector current (IC) is 500 mA.

  3. What is the DC current gain (hFE) range of the BC817-25LT3H transistor?

    The DC current gain (hFE) ranges from 160 to 400.

  4. What is the transition frequency (fT) of the BC817-25LT3H transistor?

    The transition frequency (fT) is 100 MHz.

  5. What is the maximum power dissipation (PD) of the BC817-25LT3H transistor?

    The maximum power dissipation (PD) is 300 mW.

  6. What is the operating junction temperature range of the BC817-25LT3H transistor?

    The operating junction temperature range is -55 to +150 °C.

  7. Is the BC817-25LT3H transistor RoHS compliant?

    Yes, the BC817-25LT3H transistor is Pb-Free, Halogen Free/BFR Free and RoHS compliant.

  8. What package type is the BC817-25LT3H transistor available in?

    The BC817-25LT3H transistor is available in the SOT-23 (TO-236) package.

  9. What are some common applications of the BC817-25LT3H transistor?

    Common applications include LED dimmers, switching circuits, preamplifiers, high-frequency switching, and RF modulators and demodulators.

  10. Is the BC817-25LT3H transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.06
10,854

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC817-25LT3H BC817-25LT3 BC817-25LT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
Transistor Type - - NPN
Current - Collector (Ic) (Max) - - 500 mA
Voltage - Collector Emitter Breakdown (Max) - - 45 V
Vce Saturation (Max) @ Ib, Ic - - 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - - 160 @ 100mA, 1V
Power - Max - - 300 mW
Frequency - Transition - - 100MHz
Operating Temperature - - -65°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Package / Case - - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - - SOT-23-3 (TO-236)

Related Product By Categories

BCX56-16,115
BCX56-16,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F