BC817-25LT3H
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onsemi BC817-25LT3H

Manufacturer No:
BC817-25LT3H
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 GP XSTR NPN 45V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25LT3H is a general-purpose NPN bipolar transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications, making it versatile for a wide range of electronic circuits. It is housed in the SOT-23 (TO-236) package, which is compact and suitable for surface mount technology (SMT) assembly. The BC817-25LT3H is part of the BC817 series, known for its reliability and performance in various electronic systems.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 500 mA
Base Current IB 50 mA
DC Current Gain (hFE) hFE 160 - 400 -
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V
Base-Emitter On Voltage VBE(on) 1.2 V
Transition Frequency fT 100 MHz
Maximum Power Dissipation PD 300 mW
Operating Junction Temperature TJ -55 to +150 °C

Key Features

  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
  • High DC Current Gain (hFE): Ranges from 160 to 400, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): 0.7 V, which is beneficial for reducing power losses in switching circuits.
  • High Transition Frequency (fT): 100 MHz, suitable for high-frequency applications.
  • Compact SOT-23 Package: Ideal for surface mount technology and space-constrained designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • LED Dimmers or Flashers: Can be used to control LED brightness and flashing patterns.
  • Switching Applications: Suitable for high-frequency switching due to its low VCE(sat) and high transition frequency.
  • Preamplifier for Power Amplifier: Can be used as a preamplifier stage in audio or other signal amplification circuits.
  • High Frequency Switching: Ideal for applications requiring fast switching times and high frequency operation.
  • Modulator and Demodulator for RF Frequency: Can be used in RF circuits for modulation and demodulation purposes.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817-25LT3H transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the continuous collector current (IC) rating of the BC817-25LT3H transistor?

    The continuous collector current (IC) is 500 mA.

  3. What is the DC current gain (hFE) range of the BC817-25LT3H transistor?

    The DC current gain (hFE) ranges from 160 to 400.

  4. What is the transition frequency (fT) of the BC817-25LT3H transistor?

    The transition frequency (fT) is 100 MHz.

  5. What is the maximum power dissipation (PD) of the BC817-25LT3H transistor?

    The maximum power dissipation (PD) is 300 mW.

  6. What is the operating junction temperature range of the BC817-25LT3H transistor?

    The operating junction temperature range is -55 to +150 °C.

  7. Is the BC817-25LT3H transistor RoHS compliant?

    Yes, the BC817-25LT3H transistor is Pb-Free, Halogen Free/BFR Free and RoHS compliant.

  8. What package type is the BC817-25LT3H transistor available in?

    The BC817-25LT3H transistor is available in the SOT-23 (TO-236) package.

  9. What are some common applications of the BC817-25LT3H transistor?

    Common applications include LED dimmers, switching circuits, preamplifiers, high-frequency switching, and RF modulators and demodulators.

  10. Is the BC817-25LT3H transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC817-25LT3H BC817-25LT3 BC817-25LT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
Transistor Type - - NPN
Current - Collector (Ic) (Max) - - 500 mA
Voltage - Collector Emitter Breakdown (Max) - - 45 V
Vce Saturation (Max) @ Ib, Ic - - 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - - 160 @ 100mA, 1V
Power - Max - - 300 mW
Frequency - Transition - - 100MHz
Operating Temperature - - -65°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Package / Case - - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - - SOT-23-3 (TO-236)

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