BC557BTAR
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onsemi BC557BTAR

Manufacturer No:
BC557BTAR
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Description:
TRANS PNP 45V 0.1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC557BTAR is a PNP silicon planar epitaxial transistor produced by OnSemi. It is designed for use in various electronic circuits, particularly in driver and output stages of audio amplifiers, low noise input stages of tape recorders, Hi-Fi amplifiers, and signal processing circuits of television receivers. This transistor is known for its low noise and high current gain, making it suitable for applications requiring amplification, switching, or voltage regulation.

Key Specifications

ParameterValueUnit
Transistor PolarityPNP
Continuous Collector Current100mA
Transistor Case StyleTO-92
No. of Pins3
DC Current Gain (hFE) Min200
Collector Emitter Voltage Max (Vce)45V
Power Dissipation625mW
Transition Frequency (ft)150MHz
Operating Temperature Max150°C
Junction to Ambient Thermal Resistance250°C/W

Key Features

  • Low noise and high current gain, suitable for amplification and switching applications.
  • PNP silicon planar epitaxial transistor.
  • Low current and low voltage operation.
  • TO-92 package with 3 pins.
  • High transition frequency of 150 MHz.
  • Maximum collector-emitter voltage of 45V.
  • Maximum collector current of 100mA.

Applications

  • Driver stages of audio amplifiers.
  • Low noise input stages of tape recorders and Hi-Fi amplifiers.
  • Signal processing circuits of television receivers.
  • General purpose and switching applications.
  • Relay drivers and LED drivers.
  • Darlington pair configurations.

Q & A

  1. What is the transistor polarity of the BC557BTAR?
    The BC557BTAR is a PNP transistor.
  2. What is the maximum collector current of the BC557BTAR?
    The maximum collector current is 100mA.
  3. What is the maximum collector-emitter voltage of the BC557BTAR?
    The maximum collector-emitter voltage is 45V.
  4. What is the transition frequency of the BC557BTAR?
    The transition frequency is 150 MHz.
  5. What is the operating temperature range of the BC557BTAR?
    The maximum operating temperature is 150°C.
  6. What are the typical applications of the BC557BTAR?
    Typical applications include driver stages of audio amplifiers, low noise input stages, and signal processing circuits.
  7. What is the package style of the BC557BTAR?
    The BC557BTAR comes in a TO-92 package with 3 pins.
  8. What is the DC current gain (hFE) of the BC557BTAR?
    The minimum DC current gain (hFE) is 200.
  9. How much power can the BC557BTAR dissipate?
    The maximum power dissipation is 625 mW.
  10. What is the thermal resistance of the BC557BTAR?
    The junction to ambient thermal resistance is 250°C/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:500 mW
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number BC557BTAR BC557BTFR BC558BTAR BC559BTAR BC557TAR BC550BTAR BC556BTAR BC557BTA
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type PNP PNP PNP PNP PNP NPN PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 30 V 30 V 45 V 45 V 65 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 300MHz 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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