BC557BTA
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onsemi BC557BTA

Manufacturer No:
BC557BTA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 45V 0.1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC557BTA is a PNP epitaxial silicon transistor manufactured by onsemi. It is designed for general-purpose and switching applications. This transistor is part of the BC557 series, which is known for its low current and low voltage characteristics. The BC557BTA is housed in a TO-92 package and is RoHS compliant, making it suitable for a wide range of electronic projects and designs.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)50V
Collector-Emitter Voltage (VCEO)45V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)100mA
Peak Collector Current (ICP)200mA
Peak Base Current (IBP)200mA
Maximum Junction Temperature (Tj)150°C
Transition Frequency (ft)150MHz
Collector Capacitance (Cc)6pF
Forward Current Transfer Ratio (hFE), MIN110
Power Dissipation (Pd)500mW
PackageTO-92

Key Features

  • Low Current and Voltage: The BC557BTA is designed for low current (max. 100 mA) and low voltage (max. 45 V) applications.
  • High Voltage Capability: It has a collector-emitter voltage rating of 45 V, making it suitable for various high-voltage applications.
  • Complementary Pair: The BC557BTA is part of a complementary pair with NPN transistors like the BC546, BC547, and BC548.
  • Switching and Amplifier Applications: It is versatile and can be used in both switching and amplifier circuits.
  • RoHS Compliant: The transistor is RoHS compliant, ensuring it meets environmental standards.
  • Pb-Free and Halogen-Free/BFR-Free: The device is lead-free and halogen-free/BFR-free, aligning with modern environmental regulations.

Applications

  • General Purpose Circuits: The BC557BTA is suitable for general-purpose applications where low current and voltage are required.
  • Switching Circuits: It can be used in switching circuits due to its fast switching times and high voltage ratings.
  • Amplifier Circuits: The transistor is also used in amplifier circuits where low noise and high gain are necessary.
  • Automotive and Industrial Electronics: Its robustness and compliance with environmental standards make it a good choice for automotive and industrial electronic applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC557BTA?
    The maximum collector-emitter voltage (VCEO) of the BC557BTA is 45 V.
  2. What is the maximum collector current of the BC557BTA?
    The maximum collector current (IC) of the BC557BTA is 100 mA.
  3. What is the package type of the BC557BTA?
    The BC557BTA is housed in a TO-92 package.
  4. Is the BC557BTA RoHS compliant?
    Yes, the BC557BTA is RoHS compliant.
  5. What is the transition frequency (ft) of the BC557BTA?
    The transition frequency (ft) of the BC557BTA is 150 MHz.
  6. What are the typical applications of the BC557BTA?
    The BC557BTA is typically used in general-purpose, switching, and amplifier circuits.
  7. What is the maximum junction temperature of the BC557BTA?
    The maximum junction temperature (Tj) of the BC557BTA is 150 °C.
  8. Is the BC557BTA lead-free and halogen-free/BFR-free?
    Yes, the BC557BTA is lead-free and halogen-free/BFR-free.
  9. What is the collector capacitance (Cc) of the BC557BTA?
    The collector capacitance (Cc) of the BC557BTA is 6 pF.
  10. What is the forward current transfer ratio (hFE) of the BC557BTA?
    The minimum forward current transfer ratio (hFE) of the BC557BTA is 110.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:500 mW
Frequency - Transition:150MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number BC557BTA BC557BTF BC559BTA BC558BTA BC557BTAR BC557TA BC550BTA BC556BTA BC557ATA
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active Active Obsolete Obsolete Obsolete Active Active
Transistor Type PNP PNP PNP PNP PNP PNP NPN PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 30 V 30 V 45 V 45 V 45 V 65 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz 300MHz 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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