BAS16WT1G
  • Share:

onsemi BAS16WT1G

Manufacturer No:
BAS16WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 200MA SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WT1G is a high-speed switching diode manufactured by onsemi. This device is designed for low power surface mount applications and is housed in the SC-70 (SOT-323) package. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Attribute Value Unit
Reverse Voltage - Max (Vrrm) 100 V
Reverse Recovery Time - Max 6 ns
Power Dissipation 200 mW
Average Forward Current - Max 200 mA
Peak Forward Surge Current 500 mA
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction-to-Ambient 625 °C/W

Key Features

  • Pb−Free, Halogen Free/BFR Free and RoHS Compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other specific applications
  • High-speed switching capabilities with a reverse recovery time of 6 ns
  • Low power surface mount design in SC-70 package

Applications

The BAS16WT1G is designed for high-speed switching applications. It is particularly suitable for automotive and other applications that require unique site and control change requirements. Additionally, its low power and surface mount design make it ideal for various electronic circuits where high-speed switching is necessary.

Q & A

  1. What is the maximum reverse voltage of the BAS16WT1G?

    The maximum reverse voltage (Vrrm) of the BAS16WT1G is 100 V.

  2. What is the reverse recovery time of the BAS16WT1G?

    The reverse recovery time of the BAS16WT1G is 6 ns.

  3. What is the maximum average forward current of the BAS16WT1G?

    The maximum average forward current of the BAS16WT1G is 200 mA.

  4. What is the peak forward surge current of the BAS16WT1G?

    The peak forward surge current of the BAS16WT1G is 500 mA.

  5. What package style does the BAS16WT1G use?

    The BAS16WT1G is housed in the SOT-323 (SC-70) package.

  6. Is the BAS16WT1G RoHS compliant?

    Yes, the BAS16WT1G is Pb−Free, Halogen Free/BFR Free and RoHS Compliant.

  7. What is the operating and storage junction temperature range of the BAS16WT1G?

    The operating and storage junction temperature range of the BAS16WT1G is -55 to +150 °C.

  8. What is the thermal resistance, junction-to-ambient, of the BAS16WT1G?

    The thermal resistance, junction-to-ambient, of the BAS16WT1G is 625 °C/W.

  9. Is the BAS16WT1G suitable for automotive applications?

    Yes, the BAS16WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other specific applications.

  10. What is the typical forward voltage of the BAS16WT1G at different current levels?

    The typical forward voltage of the BAS16WT1G varies from 715 mV at 1 mA to 1250 mV at 150 mA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.14
3,946

Please send RFQ , we will respond immediately.

Same Series
BAS16WT1G
BAS16WT1G
DIODE GEN PURP 100V 200MA SC70-3
NSVBAS16WT3G
NSVBAS16WT3G
DIODE GEN PURP 100V 200MA SC70

Similar Products

Part Number BAS16WT1G BAS16HT1G BAS16LT1G BAS16TT1G BAS16WT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 1.25 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-76, SOD-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SOD-323 SOT-23-3 (TO-236) SC-75, SOT-416 SC-70-3 (SOT323)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5