BAS16TT1G
  • Share:

onsemi BAS16TT1G

Manufacturer No:
BAS16TT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 200MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16TT1G is a high-speed switching diode manufactured by onsemi. It is encapsulated in a SOT-416 surface-mounted device plastic package. This diode is designed for high-speed switching applications and is known for its low forward voltage drop and fast reverse recovery time. The BAS16TT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

Attribute Value Unit
Type Silicon
Configuration Single
Reverse Current - Max 50 µA
Forward Voltage 1250 mV
Reverse Voltage - Max [Vrrm] 75 V
Reverse Recovery Time - Max 6 ns
Power Dissipation 225 mW
Diode Capacitance - Max 2 pF
Average Forward Current - Max 200 mA
Peak Current - Max 500 mA
Operating Temp Range -55°C to +150°C
Mounting Method Surface Mount

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other stringent applications.
  • S Prefix for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  • Low forward voltage drop and fast reverse recovery time, ideal for high-speed switching applications.

Applications

The BAS16TT1G is widely used in various high-speed switching applications, including:

  • Automotive systems requiring high reliability and compliance with automotive standards.
  • Consumer electronics where low forward voltage drop and fast switching times are critical.
  • Industrial control systems that demand robust and reliable switching diodes.
  • Telecommunication equipment where high-speed data transmission is necessary.

Q & A

  1. What is the maximum reverse voltage of the BAS16TT1G?

    The maximum reverse voltage (Vrrm) of the BAS16TT1G is 75 V.

  2. What is the average forward current rating of the BAS16TT1G?

    The average forward current rating of the BAS16TT1G is 200 mA.

  3. What is the peak forward surge current of the BAS16TT1G?

    The peak forward surge current of the BAS16TT1G is 500 mA.

  4. Is the BAS16TT1G RoHS compliant?

    Yes, the BAS16TT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

  5. What is the operating temperature range of the BAS16TT1G?

    The operating temperature range of the BAS16TT1G is -55°C to +150°C.

  6. What is the reverse recovery time of the BAS16TT1G?

    The reverse recovery time of the BAS16TT1G is 6 ns.

  7. What package type is the BAS16TT1G available in?

    The BAS16TT1G is available in a SOT-416 surface-mounted device plastic package.

  8. Is the BAS16TT1G AEC-Q101 qualified?

    Yes, the BAS16TT1G is AEC-Q101 qualified and PPAP capable.

  9. What is the maximum power dissipation of the BAS16TT1G?

    The maximum power dissipation of the BAS16TT1G is 225 mW.

  10. What is the diode capacitance of the BAS16TT1G?

    The diode capacitance of the BAS16TT1G is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.21
2,146

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16TT1G BAS16WT1G BAS116TT1G BAS16HT1G BAS16LT1G BAS16TT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard -
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 100 V 100 V -
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA 200mA (DC) 200mA (DC) -
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA -
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed -
Reverse Recovery Time (trr) 6 ns 6 ns 3 µs 6 ns 6 ns -
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 5 nA @ 75 V 1 µA @ 100 V 1 µA @ 100 V -
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416 SC-76, SOD-323 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SC-75, SOT-416 SC-70-3 (SOT323) SC-75, SOT-416 SOD-323 SOT-23-3 (TO-236) -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -

Related Product By Categories

BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB