Overview
The 2SB1215S-TL-E is a PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the 2SB1215 series and is known for its high performance and reliability. It is packaged in a surface-mount TO-252 (TP-FA) package, making it suitable for a variety of modern electronic designs. The transistor is designed to handle high current and voltage levels, making it a versatile component for various applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Power Dissipation (Pd) | 1 W |
| Gain Bandwidth Product (fT) | 130 MHz |
| Package Type | TO-252 (TP-FA) Surface Mount |
Key Features
- High collector current of up to 3 A, making it suitable for high-power applications.
- High voltage handling with a collector-emitter breakdown voltage of 100 V.
- Low collector-emitter saturation voltage of 200 mV, reducing power losses.
- High gain bandwidth product of 130 MHz, suitable for high-frequency applications.
- Surface-mount TO-252 package for easy integration into modern PCB designs.
- ROHS compliant, ensuring environmental sustainability.
Applications
The 2SB1215S-TL-E transistor is versatile and can be used in a variety of applications, including:
- Power amplifiers and switching circuits due to its high current and voltage handling capabilities.
- High-frequency applications such as audio amplifiers and RF circuits.
- Automotive and industrial control systems where reliability and high performance are critical.
- Power supplies and DC-DC converters.
Q & A
- What is the maximum collector current of the 2SB1215S-TL-E transistor?
The maximum collector current is 3 A. - What is the collector-emitter breakdown voltage of the 2SB1215S-TL-E?
The collector-emitter breakdown voltage is 100 V. - What is the package type of the 2SB1215S-TL-E transistor?
The package type is TO-252 (TP-FA) surface mount. - What is the gain bandwidth product (fT) of the 2SB1215S-TL-E?
The gain bandwidth product is 130 MHz. - Is the 2SB1215S-TL-E ROHS compliant?
Yes, the 2SB1215S-TL-E is ROHS compliant. - What is the maximum power dissipation of the 2SB1215S-TL-E transistor?
The maximum power dissipation is 1 W. - What is the emitter-base voltage (VEBO) of the 2SB1215S-TL-E?
The emitter-base voltage is 6 V. - What are some common applications of the 2SB1215S-TL-E transistor?
Common applications include power amplifiers, high-frequency circuits, automotive and industrial control systems, and power supplies. - What is the collector-emitter saturation voltage of the 2SB1215S-TL-E?
The collector-emitter saturation voltage is 200 mV. - Is the 2SB1215S-TL-E suitable for high-frequency applications?
Yes, with a gain bandwidth product of 130 MHz, it is suitable for high-frequency applications.
