Overview
The 2N4401G transistor, manufactured by onsemi, is a silicon NPN transistor designed for general-purpose amplifier and switching applications. It is part of the 2N4401 series and is packaged in a TO-92 metal can, making it easy to integrate into various electronic circuits. This transistor is known for its versatility and is often used in a wide range of applications where moderate voltage and current handling are required.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Base Voltage (VCBO) | 60 | V |
Collector-Emitter Voltage (VCEO) | 40 | V |
Emitter-Base Voltage (VEBO) | 6.0 | V |
Continuous Collector Current (IC) | 600 | mA |
Power Dissipation (PD) | 625 | mW |
Operating and Storage Junction Temperature (TJ, Tstg) | -65 to +150 | °C |
DC Current Gain (hFE) | 100 - 300 | |
Transition Frequency (fT) | 250 | MHz |
Key Features
- Silicon Planar Epitaxial Structure: Ensures reliable performance and durability.
- General Purpose Switching and Amplifier Applications: Suitable for a wide range of electronic circuits.
- TO-92 Package: Easy to integrate into various designs.
- High DC Current Gain (hFE): Ranges from 100 to 300, indicating good amplification capabilities.
- High Transition Frequency (fT): Up to 250 MHz, making it suitable for high-frequency applications.
Applications
The 2N4401G transistor is versatile and can be used in various applications, including:
- General Purpose Switching: Suitable for switching circuits where moderate voltage and current are involved.
- Amplifier Circuits: Can be used in amplifier configurations due to its good DC current gain.
- Automotive and Industrial Electronics: Applicable in automotive and industrial environments where reliability and durability are crucial.
- Audio and Signal Processing: Can be used in audio amplifiers and signal processing circuits due to its high transition frequency.
Q & A
- What is the collector-emitter voltage rating of the 2N4401G transistor?
The collector-emitter voltage (VCEO) rating is 40V. - What is the maximum continuous collector current of the 2N4401G transistor?
The continuous collector current (IC) is 600mA. - What is the power dissipation of the 2N4401G transistor?
The power dissipation (PD) is 625mW. - What is the DC current gain (hFE) of the 2N4401G transistor?
The DC current gain (hFE) ranges from 100 to 300. - What is the transition frequency (fT) of the 2N4401G transistor?
The transition frequency (fT) is up to 250 MHz. - What is the package type of the 2N4401G transistor?
The package type is TO-92. - What are the operating and storage junction temperatures for the 2N4401G transistor?
The operating and storage junction temperatures range from -65°C to +150°C. - Is the 2N4401G transistor suitable for high-frequency applications?
Yes, due to its high transition frequency of up to 250 MHz. - What is the complementary PNP transistor to the 2N4401G?
The complementary PNP transistor is the 2N4403. - Can the 2N4401G transistor be used in automotive and industrial electronics?
Yes, it is suitable for automotive and industrial environments due to its reliability and durability).