2N4401G
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onsemi 2N4401G

Manufacturer No:
2N4401G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 40V 0.6A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N4401G transistor, manufactured by onsemi, is a silicon NPN transistor designed for general-purpose amplifier and switching applications. It is part of the 2N4401 series and is packaged in a TO-92 metal can, making it easy to integrate into various electronic circuits. This transistor is known for its versatility and is often used in a wide range of applications where moderate voltage and current handling are required.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)60V
Collector-Emitter Voltage (VCEO)40V
Emitter-Base Voltage (VEBO)6.0V
Continuous Collector Current (IC)600mA
Power Dissipation (PD)625mW
Operating and Storage Junction Temperature (TJ, Tstg)-65 to +150°C
DC Current Gain (hFE)100 - 300
Transition Frequency (fT)250MHz

Key Features

  • Silicon Planar Epitaxial Structure: Ensures reliable performance and durability.
  • General Purpose Switching and Amplifier Applications: Suitable for a wide range of electronic circuits.
  • TO-92 Package: Easy to integrate into various designs.
  • High DC Current Gain (hFE): Ranges from 100 to 300, indicating good amplification capabilities.
  • High Transition Frequency (fT): Up to 250 MHz, making it suitable for high-frequency applications.

Applications

The 2N4401G transistor is versatile and can be used in various applications, including:

  • General Purpose Switching: Suitable for switching circuits where moderate voltage and current are involved.
  • Amplifier Circuits: Can be used in amplifier configurations due to its good DC current gain.
  • Automotive and Industrial Electronics: Applicable in automotive and industrial environments where reliability and durability are crucial.
  • Audio and Signal Processing: Can be used in audio amplifiers and signal processing circuits due to its high transition frequency.

Q & A

  1. What is the collector-emitter voltage rating of the 2N4401G transistor?
    The collector-emitter voltage (VCEO) rating is 40V.
  2. What is the maximum continuous collector current of the 2N4401G transistor?
    The continuous collector current (IC) is 600mA.
  3. What is the power dissipation of the 2N4401G transistor?
    The power dissipation (PD) is 625mW.
  4. What is the DC current gain (hFE) of the 2N4401G transistor?
    The DC current gain (hFE) ranges from 100 to 300.
  5. What is the transition frequency (fT) of the 2N4401G transistor?
    The transition frequency (fT) is up to 250 MHz.
  6. What is the package type of the 2N4401G transistor?
    The package type is TO-92.
  7. What are the operating and storage junction temperatures for the 2N4401G transistor?
    The operating and storage junction temperatures range from -65°C to +150°C.
  8. Is the 2N4401G transistor suitable for high-frequency applications?
    Yes, due to its high transition frequency of up to 250 MHz.
  9. What is the complementary PNP transistor to the 2N4401G?
    The complementary PNP transistor is the 2N4403.
  10. Can the 2N4401G transistor be used in automotive and industrial electronics?
    Yes, it is suitable for automotive and industrial environments due to its reliability and durability).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
Power - Max:625 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number 2N4401G 2N4403G 2N4401
Manufacturer onsemi onsemi NTE Electronics, Inc
Product Status Obsolete Obsolete Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V 100 @ 150mA, 2V 100 @ 150mA, 1V
Power - Max 625 mW 625 mW 625 mW
Frequency - Transition 250MHz 200MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92

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