Overview
The 2N3904RLRAH is an NPN general-purpose amplifier and switch transistor manufactured by Onsemi. This device is designed for a wide range of applications, including amplification and switching, due to its versatile characteristics. It features a high current gain, low saturation voltage, and excellent thermal stability, making it suitable for various electronic circuits.
Key Specifications
| Parameter | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 40 | V |
| Collector-Base Voltage | VCBO | - | 60 | V |
| Emitter-Base Voltage | VEBO | - | 6.0 | V |
| Collector Current - Continuous | IC | - | 200 | mA |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C |
| Total Device Dissipation | PD | - | 625 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | 200 | °C/W |
| DC Current Gain (IC = 1.0 mA, VCE = 1.0 V) | hFE | 35 | 70 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | - | 0.3 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 0.65 | 0.85 | V |
Key Features
- Low Leakage Current: Base cutoff current (IBL) and collector cutoff current (ICEX) are both typically 50 nA at VCE = 30 V and VEB = 3 V.
- Excellent DC Current Gain Linearity: The transistor has a DC current gain (hFE) ranging from 35 to 70 at IC = 1.0 mA and VCE = 1.0 V.
- Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is typically 0.3 V at IC = 50 mA and IB = 5 mA.
- Low Collector Output Capacitance: The output capacitance (Cobo) is typically 4 pF at VCB = 5 V and f = 1 MHz.
- High Frequency Capability: The current-gain bandwidth product (fT) is up to 300 MHz at IC = 10 mA and VCE = 20 V.
Applications
- General-Purpose Amplification: Suitable for a wide range of amplification tasks due to its high current gain and low noise figure.
- Switching Circuits: Can be used in switching applications with fast rise and fall times (typically 35 ns and 50 ns, respectively).
- Audio and Signal Processing: Used in audio amplifiers, signal processing circuits, and other applications requiring low noise and high fidelity.
- Automotive and Industrial Electronics: Due to its robust thermal characteristics and wide operating temperature range, it is suitable for use in automotive and industrial environments.
Q & A
- What is the maximum collector-emitter voltage for the 2N3904?
The maximum collector-emitter voltage (VCEO) is 40 V.
- What is the typical DC current gain (hFE) of the 2N3904?
The typical DC current gain (hFE) ranges from 35 to 70 at IC = 1.0 mA and VCE = 1.0 V.
- What is the collector-emitter saturation voltage (VCE(sat)) for the 2N3904?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.3 V at IC = 50 mA and IB = 5 mA.
- What is the thermal resistance from junction to ambient (RθJA) for the 2N3904?
The thermal resistance from junction to ambient (RθJA) is 200 °C/W.
- What are the typical rise and fall times for the 2N3904 in switching applications?
The typical rise time (tr) and fall time (tf) are 35 ns and 50 ns, respectively.
- What is the maximum collector current for the 2N3904?
The maximum collector current (IC) is 200 mA.
- What is the operating temperature range for the 2N3904?
The operating temperature range is from -55°C to 150°C.
- Is the 2N3904 suitable for high-frequency applications?
Yes, the 2N3904 has a current-gain bandwidth product (fT) of up to 300 MHz, making it suitable for high-frequency applications.
- What is the typical noise figure for the 2N3904?
The typical noise figure (NF) is around 5 dB at IC = 100 μA, VCE = 5 V, and RS = 1 kΩ.
- Is the 2N3904 available in different packaging options?
Yes, the 2N3904 is available in various packaging options, including TO-92 and reel packaging.
