PUMH11/ZL135
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NXP USA Inc. PUMH11/ZL135

Manufacturer No:
PUMH11/ZL135
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PUMH11/ZL135 is a 50 V, 100 mA NPN/NPN resistor-equipped double transistor produced by NXP USA Inc., now part of Nexperia. This component is packaged in a small SOT363 (SC-88) surface-mounted device (SMD) plastic package, making it ideal for space-constrained applications. The transistor features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), which simplify circuit design, reduce component count, and lower pick and place costs.

Key Specifications

Parameter Typical Maximum Unit
VCEO (Collector-Emitter Voltage) - 50 V
IO (Output Current, DC) - 100 mA
R1 (Bias Resistor) 10 -
R2 (Bias Resistor) 10 -
Ptot (Total Power Dissipation) - 300 mW
Tj (Junction Temperature) - 150 °C
Tamb (Operating Ambient Temperature) -65 150 °C

Key Features

  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Low current peripheral driver capability
  • Replacement for general-purpose transistors in digital applications
  • Control of IC inputs

Applications

  • Low current peripheral driver
  • Replacement of general-purpose transistors in digital applications
  • Control of IC inputs
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PUMH11/ZL135 transistor?

    The collector-emitter voltage (VCEO) is 50 V.

  2. What is the output current capability of the PUMH11/ZL135 transistor?

    The output current capability is 100 mA.

  3. What are the values of the built-in bias resistors in the PUMH11/ZL135 transistor?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What is the total power dissipation of the PUMH11/ZL135 transistor?

    The total power dissipation is 300 mW.

  5. What is the junction temperature limit of the PUMH11/ZL135 transistor?

    The junction temperature limit is 150 °C.

  6. What is the operating ambient temperature range of the PUMH11/ZL135 transistor?

    The operating ambient temperature range is -65 °C to 150 °C.

  7. What are the primary applications of the PUMH11/ZL135 transistor?

    The primary applications include low current peripheral drivers, replacement of general-purpose transistors in digital applications, and control of IC inputs.

  8. What package type is the PUMH11/ZL135 transistor available in?

    The transistor is available in the SOT363 (SC-88) surface-mounted device (SMD) plastic package.

  9. Is the PUMH11/ZL135 transistor RoHS compliant?

    Yes, the PUMH11/ZL135 transistor is RoHS compliant.

  10. What are the benefits of using the PUMH11/ZL135 transistor in circuit design?

    The benefits include simplified circuit design, reduced component count, and lower pick and place costs.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

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