PMPB10XNE184
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NXP USA Inc. PMPB10XNE184

Manufacturer No:
PMPB10XNE184
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
20 V, SINGLE N CHANNEL TRENCH MO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB10XNE is a 20 V, single N-channel Trench MOSFET produced by Nexperia. This Field-Effect Transistor (FET) is designed in an enhancement mode and is packaged in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. The device is known for its high efficiency, compact size, and robust thermal conduction.

Key Specifications

Parameter Value Unit
Type number PMPB10XNE -
Package DFN2020MD-6 (SOT1220) -
Channel type N-channel -
VDS [max] 20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 14 mΩ
RDSon [max] @ VGS = 2.5 V 18 mΩ
VESD (kV) 2.2 kV
Tj [max] 150 °C
ID [max] 12.9 A
QGD [typ] 4.5 nC
QG(tot) [typ] @ VGS = 4.5 V 23 nC
Ptot [max] 1.7 W
VGSth [typ] 0.65 V

Key Features

  • Leadless ultra-thin SMD plastic package: 2 x 2 x 0.65 mm, enhancing thermal conduction and reducing space requirements.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated, 100% solderable side pads for optical solder inspection.
  • High ESD protection of 2.2 kV.
  • Low RDSon values, ensuring high efficiency and low power loss.

Applications

  • Charging switches for portable devices.
  • DC-to-DC converters.
  • Power management in battery-driven portables.
  • Hard disk and computing power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMPB10XNE?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the package type of the PMPB10XNE?

    The package type is DFN2020MD-6 (SOT1220).

  3. What is the maximum junction temperature (Tj) of the PMPB10XNE?

    The maximum junction temperature (Tj) is 150°C.

  4. What is the typical gate-source threshold voltage (VGSth) of the PMPB10XNE?

    The typical gate-source threshold voltage (VGSth) is 0.65 V.

  5. What is the ESD protection level of the PMPB10XNE?

    The ESD protection level is 2.2 kV.

  6. What are some common applications of the PMPB10XNE?

    Common applications include charging switches for portable devices, DC-to-DC converters, power management in battery-driven portables, and hard disk and computing power management.

  7. What is the maximum drain current (ID) of the PMPB10XNE?

    The maximum drain current (ID) is 12.9 A.

  8. Is the PMPB10XNE RoHS compliant?

    Yes, the PMPB10XNE is RoHS compliant.

  9. What is the typical total gate charge (QG(tot)) at VGS = 4.5 V?

    The typical total gate charge (QG(tot)) at VGS = 4.5 V is 23 nC.

  10. How does the exposed drain pad benefit the PMPB10XNE?

    The exposed drain pad enhances thermal conduction, improving the overall thermal performance of the device.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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