PMPB10XNE184
  • Share:

NXP USA Inc. PMPB10XNE184

Manufacturer No:
PMPB10XNE184
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
20 V, SINGLE N CHANNEL TRENCH MO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB10XNE is a 20 V, single N-channel Trench MOSFET produced by Nexperia. This Field-Effect Transistor (FET) is designed in an enhancement mode and is packaged in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. The device is known for its high efficiency, compact size, and robust thermal conduction.

Key Specifications

Parameter Value Unit
Type number PMPB10XNE -
Package DFN2020MD-6 (SOT1220) -
Channel type N-channel -
VDS [max] 20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 14
RDSon [max] @ VGS = 2.5 V 18
VESD (kV) 2.2 kV
Tj [max] 150 °C
ID [max] 12.9 A
QGD [typ] 4.5 nC
QG(tot) [typ] @ VGS = 4.5 V 23 nC
Ptot [max] 1.7 W
VGSth [typ] 0.65 V

Key Features

  • Leadless ultra-thin SMD plastic package: 2 x 2 x 0.65 mm, enhancing thermal conduction and reducing space requirements.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated, 100% solderable side pads for optical solder inspection.
  • High ESD protection of 2.2 kV.
  • Low RDSon values, ensuring high efficiency and low power loss.

Applications

  • Charging switches for portable devices.
  • DC-to-DC converters.
  • Power management in battery-driven portables.
  • Hard disk and computing power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMPB10XNE?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the package type of the PMPB10XNE?

    The package type is DFN2020MD-6 (SOT1220).

  3. What is the maximum junction temperature (Tj) of the PMPB10XNE?

    The maximum junction temperature (Tj) is 150°C.

  4. What is the typical gate-source threshold voltage (VGSth) of the PMPB10XNE?

    The typical gate-source threshold voltage (VGSth) is 0.65 V.

  5. What is the ESD protection level of the PMPB10XNE?

    The ESD protection level is 2.2 kV.

  6. What are some common applications of the PMPB10XNE?

    Common applications include charging switches for portable devices, DC-to-DC converters, power management in battery-driven portables, and hard disk and computing power management.

  7. What is the maximum drain current (ID) of the PMPB10XNE?

    The maximum drain current (ID) is 12.9 A.

  8. Is the PMPB10XNE RoHS compliant?

    Yes, the PMPB10XNE is RoHS compliant.

  9. What is the typical total gate charge (QG(tot)) at VGS = 4.5 V?

    The typical total gate charge (QG(tot)) at VGS = 4.5 V is 23 nC.

  10. How does the exposed drain pad benefit the PMPB10XNE?

    The exposed drain pad enhances thermal conduction, improving the overall thermal performance of the device.

Product Attributes

FET Type:- 
FET Feature:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
102

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

ECH8667-TL-HX-SA
ECH8667-TL-HX-SA
Sanyo
P-CHANNEL SILICON MOSFET
NTJD4001NT1G
NTJD4001NT1G
onsemi
MOSFET 2N-CH 30V 0.25A SOT-363
BSS138DWQ-7
BSS138DWQ-7
Diodes Incorporated
MOSFET 2NCH 50V 200MA SOT363
FDC8602
FDC8602
onsemi
MOSFET 2N-CH 100V 1.2A 6-SSOT
NTND31015NZTAG
NTND31015NZTAG
onsemi
MOSFET 2N-CH 20V 200MA 6XLLGA
FDS4935BZ
FDS4935BZ
onsemi
MOSFET 2P-CH 30V 6.9A 8SOIC
BUK9K52-60E,115
BUK9K52-60E,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 16A LFPAK56D
CSD87501LT
CSD87501LT
Texas Instruments
MOSFET 2N-CH 30V 10PICOSTAR
STL7DN6LF3
STL7DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
STS4DNF60L
STS4DNF60L
STMicroelectronics
MOSFET 2N-CH 60V 4A 8-SOIC
NTND31225CZTAG
NTND31225CZTAG
onsemi
MOSFET DUAL 20V XLLGA6
MCH6664-TL-W
MCH6664-TL-W
onsemi
MOSFET 2P-CH 30V 1.5A SOT363

Related Product By Brand

BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MIMXRT1176CVM8A
MIMXRT1176CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
LPC1764FBD100,551
LPC1764FBD100,551
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 100LQFP
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX