PDTA114ET/DG/B2215
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NXP USA Inc. PDTA114ET/DG/B2215

Manufacturer No:
PDTA114ET/DG/B2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA114ET/DG/B2215 is a 50 V, 100 mA PNP resistor-equipped transistor (RET) manufactured by Nexperia. This component is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is suitable for surface-mount assembly.

Key Specifications

Parameter Value Unit
Type Number PDTA114ET -
Package SOT23 -
Channel Type PNP -
Maximum Collector Current (Ic) 100 mA
Typical Base Resistors (R1, R2) 10 kΩ, 10 kΩ -
Maximum Collector-Emitter Voltage (Vceo) 50 V
Maximum Junction Temperature (Tj) 150 °C
Maximum Total Power Dissipation (Ptot) 250 mW

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick-and-place costs
  • Cost-saving alternative for BC847 series in digital applications
  • Suitable for controlling IC inputs and switching loads

Applications

The PDTA114ET/DG/B2215 is widely used in various digital applications across different industries, including:

  • Automotive segment: For digital circuits and load switching.
  • Industrial segment: For controlling IC inputs and general-purpose switching applications.
  • Consumer electronics: As a cost-effective solution for simplifying circuit designs.

Q & A

  1. What is the maximum collector current of the PDTA114ET?

    The maximum collector current is 100 mA.

  2. What type of package does the PDTA114ET use?

    The PDTA114ET is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What are the typical values of the built-in base resistors?

    The typical values of the built-in base resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What is the maximum collector-emitter voltage (Vceo) of the PDTA114ET?

    The maximum collector-emitter voltage (Vceo) is 50 V.

  5. What is the maximum junction temperature (Tj) of the PDTA114ET?

    The maximum junction temperature (Tj) is 150 °C.

  6. What are the primary applications of the PDTA114ET?

    The primary applications include digital circuits in automotive and industrial segments, controlling IC inputs, and general-purpose switching applications.

  7. How does the PDTA114ET simplify circuit design?

    The PDTA114ET simplifies circuit design by integrating bias resistors, reducing the need for external resistors and thus reducing component count and pick-and-place costs.

  8. Is the PDTA114ET RoHS compliant?
  9. What is the NPN complement of the PDTA114ET?

    The NPN complement of the PDTA114ET is the PDTC114ET.

  10. Where can I find more detailed technical information about the PDTA114ET?

    You can find detailed technical information in the datasheet available on Nexperia's official website or through authorized distributors like Digi-Key.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PDTA114ET/DG/B2215 PDTC114ET/DG/B2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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