PDTC114ET/DG/B2215
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NXP USA Inc. PDTC114ET/DG/B2215

Manufacturer No:
PDTC114ET/DG/B2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The PDTC114ET is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It is housed in a small SOT23 Surface-Mounted Device (SMD) plastic package. This transistor is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base - - 50 V
IO (Output Current) - - - 100 mA
R1 (Bias Resistor 1) - 7 10 13
R2/R1 (Bias Resistor Ratio) - 0.8 1 1.2 -
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 250 mW
Tj (Junction Temperature) - - - 150 °C
Tamb (Ambient Temperature) - -65 - 150 °C

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified for automotive applications
  • Lead-free and RoHS compliant

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads

Q & A

  1. What is the maximum collector-emitter voltage of the PDTC114ET? The maximum collector-emitter voltage (VCEO) is 50 V.
  2. What is the output current capability of the PDTC114ET? The output current capability is 100 mA.
  3. What are the values of the built-in bias resistors? The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.
  4. What package type is the PDTC114ET available in? The PDTC114ET is available in a SOT23 package.
  5. Is the PDTC114ET AEC-Q101 qualified? Yes, the PDTC114ET is AEC-Q101 qualified for automotive applications.
  6. What are the typical applications of the PDTC114ET? Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.
  7. How does the PDTC114ET simplify circuit design? The PDTC114ET simplifies circuit design by having built-in bias resistors, which reduces the need for additional external components.
  8. Is the PDTC114ET lead-free and RoHS compliant? Yes, the PDTC114ET is lead-free and RoHS compliant.
  9. What is the maximum junction temperature of the PDTC114ET? The maximum junction temperature (Tj) is 150 °C.
  10. What is the total power dissipation of the PDTC114ET at 25 °C? The total power dissipation (Ptot) at 25 °C is 250 mW.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PDTC114ET/DG/B2215 PDTA114ET/DG/B2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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