PDTC114ET/DG/B2215
  • Share:

NXP USA Inc. PDTC114ET/DG/B2215

Manufacturer No:
PDTC114ET/DG/B2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It is housed in a small SOT23 Surface-Mounted Device (SMD) plastic package. This transistor is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various applications.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base - - 50 V
IO (Output Current) - - - 100 mA
R1 (Bias Resistor 1) - 7 10 13
R2/R1 (Bias Resistor Ratio) - 0.8 1 1.2 -
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 250 mW
Tj (Junction Temperature) - - - 150 °C
Tamb (Ambient Temperature) - -65 - 150 °C

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified for automotive applications
  • Lead-free and RoHS compliant

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads

Q & A

  1. What is the maximum collector-emitter voltage of the PDTC114ET? The maximum collector-emitter voltage (VCEO) is 50 V.
  2. What is the output current capability of the PDTC114ET? The output current capability is 100 mA.
  3. What are the values of the built-in bias resistors? The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.
  4. What package type is the PDTC114ET available in? The PDTC114ET is available in a SOT23 package.
  5. Is the PDTC114ET AEC-Q101 qualified? Yes, the PDTC114ET is AEC-Q101 qualified for automotive applications.
  6. What are the typical applications of the PDTC114ET? Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.
  7. How does the PDTC114ET simplify circuit design? The PDTC114ET simplifies circuit design by having built-in bias resistors, which reduces the need for additional external components.
  8. Is the PDTC114ET lead-free and RoHS compliant? Yes, the PDTC114ET is lead-free and RoHS compliant.
  9. What is the maximum junction temperature of the PDTC114ET? The maximum junction temperature (Tj) is 150 °C.
  10. What is the total power dissipation of the PDTC114ET at 25 °C? The total power dissipation (Ptot) at 25 °C is 250 mW.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
568

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PDTC114ET/DG/B2215 PDTA114ET/DG/B2215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

Related Product By Categories

PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
SAF7755HV/N205K
SAF7755HV/N205K
NXP USA Inc.
DSP AUDIO MULTI-TUNER
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
UJA1168TK,118
UJA1168TK,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 14HVSON
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP