BUK768R1-40E/GFJ
  • Share:

NXP USA Inc. BUK768R1-40E/GFJ

Manufacturer No:
BUK768R1-40E/GFJ
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK768R1-40E/GFJ is a standard level N-channel MOSFET produced by NXP USA Inc., now part of Nexperia. This device is designed using TrenchMOS technology and is packaged in a SOT404 format. It has been qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding applications. The MOSFET is designed to operate in thermally demanding environments, with a maximum junction temperature of +175°C.

Key Specifications

ParameterConditionsMinTypMaxUnit
VDS (Drain-Source Voltage)---40V
VGS (Gate-Source Voltage)---±20V
ID (Drain Current)Tj = 25°C--68A
RDS(on) (Drain-Source On-Resistance)VGS = 10 V; ID = 25 A-1.82.5mΩ
Tj (Junction Temperature)---175°C

Key Features

  • Standard level N-channel MOSFET using TrenchMOS technology
  • AEC-Q101 qualified for automotive applications
  • High junction temperature rating of +175°C
  • Low on-state resistance (RDS(on)) of 1.8 mΩ (typical) at VGS = 10 V and ID = 25 A
  • SOT404 package for compact design

Applications

The BUK768R1-40E/GFJ is suitable for various automotive and industrial applications that require high reliability and performance in demanding thermal environments. These include power management systems, motor control, and other high-power switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK768R1-40E/GFJ?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum gate-source voltage (VGS)?
    The maximum gate-source voltage (VGS) is ±20 V.
  3. What is the typical on-state resistance (RDS(on))?
    The typical on-state resistance (RDS(on)) is 1.8 mΩ at VGS = 10 V and ID = 25 A.
  4. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is +175°C.
  5. What package type is used for the BUK768R1-40E/GFJ?
    The BUK768R1-40E/GFJ is packaged in a SOT404 format.
  6. Is the BUK768R1-40E/GFJ qualified for automotive applications?
    Yes, it is qualified to the AEC-Q101 standard for automotive applications.
  7. What technology is used in the BUK768R1-40E/GFJ?
    The BUK768R1-40E/GFJ uses TrenchMOS technology.
  8. What are some typical applications for the BUK768R1-40E/GFJ?
    Typical applications include power management systems, motor control, and other high-power switching applications in automotive and industrial sectors.
  9. What is the maximum drain current (ID)?
    The maximum drain current (ID) is 68 A at Tj = 25°C.
  10. Where can I find detailed specifications for the BUK768R1-40E/GFJ?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors like Mouser Electronics.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
345

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
FS32K116LAT0MLFR
FS32K116LAT0MLFR
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO