BUK768R1-40E/GFJ
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NXP USA Inc. BUK768R1-40E/GFJ

Manufacturer No:
BUK768R1-40E/GFJ
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The BUK768R1-40E/GFJ is a standard level N-channel MOSFET produced by NXP USA Inc., now part of Nexperia. This device is designed using TrenchMOS technology and is packaged in a SOT404 format. It has been qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding applications. The MOSFET is designed to operate in thermally demanding environments, with a maximum junction temperature of +175°C.

Key Specifications

ParameterConditionsMinTypMaxUnit
VDS (Drain-Source Voltage)---40V
VGS (Gate-Source Voltage)---±20V
ID (Drain Current)Tj = 25°C--68A
RDS(on) (Drain-Source On-Resistance)VGS = 10 V; ID = 25 A-1.82.5
Tj (Junction Temperature)---175°C

Key Features

  • Standard level N-channel MOSFET using TrenchMOS technology
  • AEC-Q101 qualified for automotive applications
  • High junction temperature rating of +175°C
  • Low on-state resistance (RDS(on)) of 1.8 mΩ (typical) at VGS = 10 V and ID = 25 A
  • SOT404 package for compact design

Applications

The BUK768R1-40E/GFJ is suitable for various automotive and industrial applications that require high reliability and performance in demanding thermal environments. These include power management systems, motor control, and other high-power switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK768R1-40E/GFJ?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the maximum gate-source voltage (VGS)?
    The maximum gate-source voltage (VGS) is ±20 V.
  3. What is the typical on-state resistance (RDS(on))?
    The typical on-state resistance (RDS(on)) is 1.8 mΩ at VGS = 10 V and ID = 25 A.
  4. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is +175°C.
  5. What package type is used for the BUK768R1-40E/GFJ?
    The BUK768R1-40E/GFJ is packaged in a SOT404 format.
  6. Is the BUK768R1-40E/GFJ qualified for automotive applications?
    Yes, it is qualified to the AEC-Q101 standard for automotive applications.
  7. What technology is used in the BUK768R1-40E/GFJ?
    The BUK768R1-40E/GFJ uses TrenchMOS technology.
  8. What are some typical applications for the BUK768R1-40E/GFJ?
    Typical applications include power management systems, motor control, and other high-power switching applications in automotive and industrial sectors.
  9. What is the maximum drain current (ID)?
    The maximum drain current (ID) is 68 A at Tj = 25°C.
  10. Where can I find detailed specifications for the BUK768R1-40E/GFJ?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors like Mouser Electronics.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
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