Overview
The BUK768R1-40E/GFJ is a standard level N-channel MOSFET produced by NXP USA Inc., now part of Nexperia. This device is designed using TrenchMOS technology and is packaged in a SOT404 format. It has been qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding applications. The MOSFET is designed to operate in thermally demanding environments, with a maximum junction temperature of +175°C.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VDS (Drain-Source Voltage) | - | - | - | 40 | V |
VGS (Gate-Source Voltage) | - | - | - | ±20 | V |
ID (Drain Current) | Tj = 25°C | - | - | 68 | A |
RDS(on) (Drain-Source On-Resistance) | VGS = 10 V; ID = 25 A | - | 1.8 | 2.5 | mΩ |
Tj (Junction Temperature) | - | - | - | 175 | °C |
Key Features
- Standard level N-channel MOSFET using TrenchMOS technology
- AEC-Q101 qualified for automotive applications
- High junction temperature rating of +175°C
- Low on-state resistance (RDS(on)) of 1.8 mΩ (typical) at VGS = 10 V and ID = 25 A
- SOT404 package for compact design
Applications
The BUK768R1-40E/GFJ is suitable for various automotive and industrial applications that require high reliability and performance in demanding thermal environments. These include power management systems, motor control, and other high-power switching applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK768R1-40E/GFJ?
The maximum drain-source voltage (VDS) is 40 V. - What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±20 V. - What is the typical on-state resistance (RDS(on))?
The typical on-state resistance (RDS(on)) is 1.8 mΩ at VGS = 10 V and ID = 25 A. - What is the maximum junction temperature (Tj)?
The maximum junction temperature (Tj) is +175°C. - What package type is used for the BUK768R1-40E/GFJ?
The BUK768R1-40E/GFJ is packaged in a SOT404 format. - Is the BUK768R1-40E/GFJ qualified for automotive applications?
Yes, it is qualified to the AEC-Q101 standard for automotive applications. - What technology is used in the BUK768R1-40E/GFJ?
The BUK768R1-40E/GFJ uses TrenchMOS technology. - What are some typical applications for the BUK768R1-40E/GFJ?
Typical applications include power management systems, motor control, and other high-power switching applications in automotive and industrial sectors. - What is the maximum drain current (ID)?
The maximum drain current (ID) is 68 A at Tj = 25°C. - Where can I find detailed specifications for the BUK768R1-40E/GFJ?
Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors like Mouser Electronics.