BC856BS/DG/B3115
  • Share:

NXP USA Inc. BC856BS/DG/B3115

Manufacturer No:
BC856BS/DG/B3115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BS/DG/B3115 is a general-purpose bipolar junction transistor (BJT) produced by NXP USA Inc. This transistor is part of the BC856 series, known for its versatility and reliability in various electronic applications. It is designed to operate in a wide range of conditions, making it suitable for both amateur and professional electronics projects.

Key Specifications

Parameter Value Unit
Collector-Base Breakdown Voltage (VBRCBO) -80 V
Collector-Emitter Breakdown Voltage (VBRCEO) -65 V
Emitter-Base Breakdown Voltage (VBREBO) -5.0 V
DC Current Gain (hFE) 125 - 420 -
Collector-Emitter Saturation Voltage (VCE(sat)) -0.3 - 0.65 V
Base-Emitter Saturation Voltage (VBE(sat)) -0.7 - 0.9 V
Collector Cutoff Current (ICBO) -15 nA A
Operating Temperature (TJ) 150°C °C
Package SOT-23, SOT-323 -

Key Features

  • General Purpose Amplifier: Designed for general-purpose amplifier applications, making it versatile for various electronic projects.
  • High DC Current Gain: Offers a high DC current gain, ensuring efficient amplification of signals.
  • Low VCE(sat): Features low collector-emitter saturation voltage, which helps in reducing power consumption and heat generation.
  • Compact Packaging: Available in compact SOT-23 and SOT-323 packages, ideal for space-constrained designs.
  • High Operating Temperature: Can operate up to 150°C junction temperature, making it suitable for high-temperature environments.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.

Applications

  • Power Management: Used in power management circuits, including voltage regulators and load switches.
  • LED Lighting: Suitable for LED lighting applications due to its low VCE(sat) and high current gain.
  • Motor Drive: Can be used in motor drive circuits where high current gain and low saturation voltage are required.
  • Backlight Units: Used in backlight units for displays, leveraging its efficiency and reliability.
  • Relay Replacement: Often used as a replacement for relays in various electronic circuits.
  • IGBT Drive: Used in IGBT drive circuits due to its high current gain and low saturation voltage.

Q & A

  1. What is the BC856BS/DG/B3115 transistor used for?

    The BC856BS/DG/B3115 is a general-purpose bipolar junction transistor used in various amplifier applications, power management, LED lighting, motor drives, and more.

  2. What is the maximum collector-emitter breakdown voltage of the BC856BS/DG/B3115?

    The maximum collector-emitter breakdown voltage (VBRCEO) is -65 V.

  3. What is the typical DC current gain (hFE) of the BC856BS/DG/B3115?

    The typical DC current gain (hFE) ranges from 125 to 420.

  4. What is the maximum collector-emitter saturation voltage (VCE(sat)) of the BC856BS/DG/B3115?

    The maximum collector-emitter saturation voltage (VCE(sat)) is -0.65 V.

  5. What is the operating temperature range of the BC856BS/DG/B3115?

    The operating temperature range is up to 150°C junction temperature.

  6. Is the BC856BS/DG/B3115 AEC-Q101 qualified?

    Yes, the BC856BS/DG/B3115 is qualified to the AEC-Q101 standard, ensuring its reliability in automotive and other demanding applications.

  7. What packages are available for the BC856BS/DG/B3115?

    The BC856BS/DG/B3115 is available in SOT-23 and SOT-323 packages.

  8. What are some common applications of the BC856BS/DG/B3115?

    Common applications include power management, LED lighting, motor drives, backlight units, relay replacement, and IGBT drive circuits.

  9. What is the collector cutoff current (ICBO) of the BC856BS/DG/B3115?

    The collector cutoff current (ICBO) is -15 nA.

  10. How does the BC856BS/DG/B3115 contribute to power efficiency in circuits?

    The BC856BS/DG/B3115 contributes to power efficiency through its low VCE(sat) and high DC current gain, reducing power consumption and heat generation.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.03
9,773

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC856BS/DG/B3115 BC856BW/DG/B3115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
BFS20
BFS20
Diotec Semiconductor
TRANS NPN 20V 0.025A SOT23-3
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON