BC856BS/DG/B3115
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NXP USA Inc. BC856BS/DG/B3115

Manufacturer No:
BC856BS/DG/B3115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BS/DG/B3115 is a general-purpose bipolar junction transistor (BJT) produced by NXP USA Inc. This transistor is part of the BC856 series, known for its versatility and reliability in various electronic applications. It is designed to operate in a wide range of conditions, making it suitable for both amateur and professional electronics projects.

Key Specifications

Parameter Value Unit
Collector-Base Breakdown Voltage (VBRCBO) -80 V
Collector-Emitter Breakdown Voltage (VBRCEO) -65 V
Emitter-Base Breakdown Voltage (VBREBO) -5.0 V
DC Current Gain (hFE) 125 - 420 -
Collector-Emitter Saturation Voltage (VCE(sat)) -0.3 - 0.65 V
Base-Emitter Saturation Voltage (VBE(sat)) -0.7 - 0.9 V
Collector Cutoff Current (ICBO) -15 nA A
Operating Temperature (TJ) 150°C °C
Package SOT-23, SOT-323 -

Key Features

  • General Purpose Amplifier: Designed for general-purpose amplifier applications, making it versatile for various electronic projects.
  • High DC Current Gain: Offers a high DC current gain, ensuring efficient amplification of signals.
  • Low VCE(sat): Features low collector-emitter saturation voltage, which helps in reducing power consumption and heat generation.
  • Compact Packaging: Available in compact SOT-23 and SOT-323 packages, ideal for space-constrained designs.
  • High Operating Temperature: Can operate up to 150°C junction temperature, making it suitable for high-temperature environments.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding applications.

Applications

  • Power Management: Used in power management circuits, including voltage regulators and load switches.
  • LED Lighting: Suitable for LED lighting applications due to its low VCE(sat) and high current gain.
  • Motor Drive: Can be used in motor drive circuits where high current gain and low saturation voltage are required.
  • Backlight Units: Used in backlight units for displays, leveraging its efficiency and reliability.
  • Relay Replacement: Often used as a replacement for relays in various electronic circuits.
  • IGBT Drive: Used in IGBT drive circuits due to its high current gain and low saturation voltage.

Q & A

  1. What is the BC856BS/DG/B3115 transistor used for?

    The BC856BS/DG/B3115 is a general-purpose bipolar junction transistor used in various amplifier applications, power management, LED lighting, motor drives, and more.

  2. What is the maximum collector-emitter breakdown voltage of the BC856BS/DG/B3115?

    The maximum collector-emitter breakdown voltage (VBRCEO) is -65 V.

  3. What is the typical DC current gain (hFE) of the BC856BS/DG/B3115?

    The typical DC current gain (hFE) ranges from 125 to 420.

  4. What is the maximum collector-emitter saturation voltage (VCE(sat)) of the BC856BS/DG/B3115?

    The maximum collector-emitter saturation voltage (VCE(sat)) is -0.65 V.

  5. What is the operating temperature range of the BC856BS/DG/B3115?

    The operating temperature range is up to 150°C junction temperature.

  6. Is the BC856BS/DG/B3115 AEC-Q101 qualified?

    Yes, the BC856BS/DG/B3115 is qualified to the AEC-Q101 standard, ensuring its reliability in automotive and other demanding applications.

  7. What packages are available for the BC856BS/DG/B3115?

    The BC856BS/DG/B3115 is available in SOT-23 and SOT-323 packages.

  8. What are some common applications of the BC856BS/DG/B3115?

    Common applications include power management, LED lighting, motor drives, backlight units, relay replacement, and IGBT drive circuits.

  9. What is the collector cutoff current (ICBO) of the BC856BS/DG/B3115?

    The collector cutoff current (ICBO) is -15 nA.

  10. How does the BC856BS/DG/B3115 contribute to power efficiency in circuits?

    The BC856BS/DG/B3115 contributes to power efficiency through its low VCE(sat) and high DC current gain, reducing power consumption and heat generation.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856BS/DG/B3115 BC856BW/DG/B3115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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