BC847AW,115
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NXP Semiconductors BC847AW,115

Manufacturer No:
BC847AW,115
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA BC847AW - SMALL SIGNAL
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BC847AW,115 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is designed for a wide range of applications requiring low to moderate current and voltage handling. This transistor is packaged in a small SOT323 (SC-70) surface-mount device (SMD) plastic package, making it suitable for compact and high-density circuit designs.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCB) 45 V
Collector Current (IC) 100 mA
Collector-Emitter Voltage (VCE) 45 V
Base-Emitter Voltage (VBE) - V
Collector-Base Cut-off Current (ICBO) - 15 nA (Tj = 25°C), - 5 μA (Tj = 150°C) A
Emitter-Base Cut-off Current (IEBO) - 1.5 pF F
Noise Figure (NF) 2 - 10 dB dB
Thermal Resistance (Rth(j-a)) 625 K/W K/W
Package Type SOT323 (SC-70) -

Key Features

  • Low Current and Voltage Handling: The BC847AW,115 can handle up to 100 mA of collector current and 45 V of collector-base voltage, making it suitable for a variety of general-purpose applications.
  • Compact Package: The SOT323 (SC-70) package is very small, allowing for high-density circuit designs and minimizing board space.
  • Low Noise Figure: With a noise figure ranging from 2 to 10 dB, this transistor is suitable for applications requiring low noise levels.
  • Thermal Characteristics: The transistor has a thermal resistance from junction to ambient of 625 K/W, ensuring reliable operation under various thermal conditions.
  • PNP Complements: The BC847AW,115 has PNP complements such as BC856, BC857, and BC858, making it versatile for different circuit configurations.

Applications

  • General-Purpose Amplification: Suitable for amplifying low to moderate current signals in various electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its moderate current and voltage handling capabilities.
  • Audio and Signal Processing: The low noise figure makes it suitable for audio and signal processing applications where noise minimization is crucial.
  • Automotive and Industrial Electronics: Its robust thermal characteristics and reliability make it a good choice for automotive and industrial electronic systems.

Q & A

  1. What is the maximum collector current of the BC847AW,115 transistor?

    The maximum collector current is 100 mA.

  2. What is the maximum collector-base voltage of the BC847AW,115 transistor?

    The maximum collector-base voltage is 45 V.

  3. What package type is the BC847AW,115 transistor available in?

    The transistor is available in the SOT323 (SC-70) surface-mount device (SMD) plastic package.

  4. What are the PNP complements of the BC847AW,115 transistor?

    The PNP complements are BC856, BC857, and BC858.

  5. What is the thermal resistance from junction to ambient for the BC847AW,115 transistor?

    The thermal resistance from junction to ambient is 625 K/W.

  6. What is the typical noise figure of the BC847AW,115 transistor?

    The noise figure ranges from 2 to 10 dB.

  7. What are some common applications of the BC847AW,115 transistor?

    Common applications include general-purpose amplification, switching circuits, audio and signal processing, and automotive and industrial electronics.

  8. How does the collector-base cut-off current (ICBO) vary with temperature for the BC847AW,115 transistor?

    The ICBO is -15 nA at Tj = 25°C and -5 μA at Tj = 150°C.

  9. What is the emitter-base cut-off current (IEBO) of the BC847AW,115 transistor?

    The IEBO is approximately 1.5 pF.

  10. Is the BC847AW,115 transistor suitable for high-density circuit designs?

    Yes, due to its compact SOT323 (SC-70) package, it is suitable for high-density circuit designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC847AW,115 BC847AW,135 BC847BW,115 BC847AT,115
Manufacturer NXP Semiconductors NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-75, SOT-416
Supplier Device Package SOT-323 SOT-323 SOT-323 SC-75

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