Overview
The BC847AT,115 is a high-performance NPN bipolar transistor manufactured by NXP USA Inc. This transistor is designed to handle various high-demand application scenarios, particularly in automotive and other high-reliability environments, as it is AEC-Q101 qualified. It utilizes the movement of charge carriers within semiconductor materials, making it suitable for a wide range of applications requiring high current amplification and stability.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN Bipolar Transistor |
Maximum Collector Current (Ic) | 100 mA |
Maximum Collector-Emitter Breakdown Voltage (Vceo) | 45 V |
DC Current Gain (hFE) @ Ic and Vce | 110 @ 2 mA, 5 V |
Maximum Collector Cutoff Current (ICBO) | 15 nA |
Frequency Transition | 100 MHz |
Maximum Power Dissipation | 150 mW |
Vce Saturation (Max) @ Ib, Ic | 400 mV @ 5 mA, 100 mA |
Package Type | SC-75, SOT-416 Surface Mount |
Moisture Sensitivity Level | 1 |
RoHS Status | Lead Free / RoHS Compliant |
Key Features
- High current amplification ability with a DC Current Gain (hFE) of 110 @ 2 mA, 5 V.
- High-frequency response up to 100 MHz, making it suitable for high-frequency applications.
- Maximum collector current of 100 mA and maximum collector-emitter breakdown voltage of 45 V.
- Low Vce Saturation of 400 mV @ 5 mA, 100 mA, which helps in reducing energy consumption.
- SC-75, SOT-416 surface mount packaging for easy integration onto circuit boards.
- Tape & Reel packaging for mass production and automated assembly.
- Halogen-free and RoHS compliant.
- Operating temperature up to 150°C (TJ).
Applications
- Analog Switch: Control the on and off of analog signals, such as in audio circuits.
- Drive Circuit: Drive various load devices like electric motors and displays.
- Microwave Amplifier: Suitable for microwave amplifier circuits due to its high-frequency response.
- Constant Current Source: Can be used to construct simple constant current source circuits in various DC power supply applications.
Q & A
- What is the maximum collector current of the BC847AT,115 transistor?
The maximum collector current is 100 mA. - What is the maximum collector-emitter breakdown voltage of the BC847AT,115 transistor?
The maximum collector-emitter breakdown voltage is 45 V. - What is the DC Current Gain (hFE) of the BC847AT,115 transistor?
The DC Current Gain (hFE) is 110 @ 2 mA, 5 V. - What is the frequency transition of the BC847AT,115 transistor?
The frequency transition is up to 100 MHz. - What type of packaging does the BC847AT,115 transistor use?
The transistor uses SC-75, SOT-416 surface mount packaging and is available in Tape & Reel format. - Is the BC847AT,115 transistor RoHS compliant?
Yes, the transistor is Lead Free / RoHS Compliant. - What are some common applications of the BC847AT,115 transistor?
Common applications include analog switches, drive circuits, microwave amplifiers, and constant current sources. - What is the maximum power dissipation of the BC847AT,115 transistor?
The maximum power dissipation is 150 mW. - What is the operating temperature range of the BC847AT,115 transistor?
The operating temperature range is up to 150°C (TJ). - Is the BC847AT,115 transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified, making it suitable for automotive and other high-reliability environments.