PSMN013-100BS,118
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Nexperia USA Inc. PSMN013-100BS,118

Manufacturer No:
PSMN013-100BS,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 68A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN013-100BS,118 is a standard level N-channel MOSFET produced by Nexperia USA Inc. This component is designed and qualified for use in a wide range of applications, particularly those requiring high current and voltage handling capabilities. It is packaged in a D2PAK (TO-263-3) surface mount configuration, making it suitable for various power management and switching applications.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)100V
Continuous Drain Current (ID)68A
On-State Resistance (Rds(on))0.0139Ω
Power Dissipation (Pd)170W
Package TypeD2PAK (TO-263-3)
Operating Temperature Range-55 to 175°C

Key Features

  • High current capability of up to 68 A at Tc.
  • Low on-state resistance of 0.0139 Ω.
  • High voltage rating of 100 V.
  • Qualified to operate at temperatures up to 175 °C.
  • D2PAK package for surface mount applications.
  • Suitable for high-power switching and power management applications.

Applications

The PSMN013-100BS,118 is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems requiring high reliability and temperature endurance.
  • High-power switching circuits.

Q & A

  1. What is the voltage rating of the PSMN013-100BS,118 MOSFET?
    The voltage rating (Vds) is 100 V.
  2. What is the maximum continuous drain current of this MOSFET?
    The maximum continuous drain current (ID) is 68 A at Tc.
  3. What is the on-state resistance of this MOSFET?
    The on-state resistance (Rds(on)) is 0.0139 Ω.
  4. In what package is the PSMN013-100BS,118 available?
    The PSMN013-100BS,118 is available in a D2PAK (TO-263-3) surface mount package.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is -55 to 175 °C.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, industrial power management, automotive systems, and high-power switching circuits.
  7. Is the PSMN013-100BS,118 suitable for high-power applications?
    Yes, it is designed for high-power applications with a power dissipation of up to 170 W at Tc.
  8. Where can I find detailed specifications for the PSMN013-100BS,118?
    Detailed specifications can be found in the datasheet available on Nexperia's official website, DigiKey, Mouser, and other electronic component distributors.
  9. Is the PSMN013-100BS,118 RoHS compliant?
    Yes, the PSMN013-100BS,118 is RoHS compliant.
  10. What is the significance of the '118' in the part number PSMN013-100BS,118?
    The '118' typically indicates the packaging and shipping configuration, such as tape and reel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3195 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number PSMN013-100BS,118 PSMN016-100BS,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 57A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 15A, 10V 16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3195 pF @ 50 V 2404 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 148W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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