PBSS4130PAN,115
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Nexperia USA Inc. PBSS4130PAN,115

Manufacturer No:
PBSS4130PAN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 2NPN 30V 1A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4130PAN,115 is a bipolar junction transistor (BJT) array produced by Nexperia USA Inc. This component is designed as a dual NPN transistor, offering high performance and reliability in various electronic applications. It features a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high collector current gain (hFE) at high collector currents, making it suitable for a range of uses including power management, switching, and amplification.

Key Specifications

ParameterValue
Voltage Rating (Vceo)30 V
Collector Current (Ic)1 A
Collector-Emitter Saturation Voltage (VCEsat)Very low
Collector Current Gain (hFE)High at high Ic
Maximum Power Dissipation (Ptot)510 mW
Transition Frequency (ft)165 MHz
Package TypeSurface Mount 6-HUSON (2x2)

Key Features

  • Very low collector-emitter saturation voltage (VCEsat) for efficient operation.
  • High collector current capability (Ic and ICM) for handling high current applications.
  • High collector current gain (hFE) at high collector currents, ensuring reliable performance.
  • Surface mount package (6-HUSON, 2x2) for easy integration into modern PCB designs.

Applications

The PBSS4130PAN,115 is versatile and can be used in various applications, including:

  • Power management and switching circuits.
  • Amplifier circuits requiring high current gain and low VCEsat.
  • Automotive and industrial control systems.
  • General-purpose electronic devices where high reliability and performance are required.

Q & A

  1. What is the voltage rating of the PBSS4130PAN,115? The voltage rating (Vceo) is 30 V.
  2. What is the maximum collector current of the PBSS4130PAN,115? The maximum collector current (Ic) is 1 A.
  3. What is the collector-emitter saturation voltage (VCEsat) of the PBSS4130PAN,115? The VCEsat is very low.
  4. What is the transition frequency (ft) of the PBSS4130PAN,115? The transition frequency (ft) is 165 MHz.
  5. What is the package type of the PBSS4130PAN,115? The package type is Surface Mount 6-HUSON (2x2).
  6. What are the key features of the PBSS4130PAN,115? Key features include very low VCEsat, high collector current capability, and high collector current gain (hFE) at high Ic.
  7. In what types of applications is the PBSS4130PAN,115 commonly used? It is commonly used in power management, switching circuits, amplifier circuits, automotive, and industrial control systems.
  8. Is the PBSS4130PAN,115 RoHS compliant? Yes, the PBSS4130PAN,115 is RoHS compliant.
  9. What is the maximum power dissipation (Ptot) of the PBSS4130PAN,115? The maximum power dissipation (Ptot) is 510 mW.
  10. How many transistors are in the PBSS4130PAN,115 array? The PBSS4130PAN,115 is a dual NPN transistor array.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):1A
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:100mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 500mA, 2V
Power - Max:510mW
Frequency - Transition:165MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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Similar Products

Part Number PBSS4130PAN,115 PBSS4130PANP,115 PBSS4160PAN,115 PBSS4230PAN,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type 2 NPN (Dual) NPN, PNP 2 NPN (Dual) -
Current - Collector (Ic) (Max) 1A 1A 1A 2A
Voltage - Collector Emitter Breakdown (Max) 30V 30V 60V 30V
Vce Saturation (Max) @ Ib, Ic 100mV @ 50mA, 500mA 100mV @ 50mA, 500mA 120mV @ 50mA, 500mA 290mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 500mA, 2V 210 @ 500mA, 2V 150 @ 500mA, 2V 200 @ 1A, 2V
Power - Max 510mW 510mW 510mW 510mW
Frequency - Transition 165MHz 165MHz 175MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2)

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