PBSS4130PANP,115
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Nexperia USA Inc. PBSS4130PANP,115

Manufacturer No:
PBSS4130PANP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 30V 1A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4130PANP,115 is a bipolar transistor array produced by Nexperia USA Inc. This component features a combination of one NPN and one PNP transistor, making it a versatile solution for various electronic applications. The device is known for its low collector-emitter saturation voltage (VCEsat) and high collector current capability, which are critical for efficient and reliable operation in a range of circuits.

Key Specifications

ParameterValue
Transistor Type1 NPN, 1 PNP
Collector-Emitter Voltage (VCE)30 V
Collector Current (IC)1 A
Collector Current Gain (hFE)High at high IC
Collector-Emitter Saturation Voltage (VCEsat)Very low
Frequency (fT)165 MHz
Power Dissipation (Ptot)510 mW
PackageDFN2020-6 (6-HUSON, 2x2 mm)

Key Features

  • Very low collector-emitter saturation voltage (VCEsat) for efficient operation.
  • High collector current capability (IC and ICM) to handle demanding applications.
  • High collector current gain (hFE) at high collector currents, ensuring reliable performance.
  • Compact DFN2020-6 package (6-HUSON, 2x2 mm) for space-saving designs.

Applications

The PBSS4130PANP,115 is suitable for a variety of applications, including but not limited to:

  • Automotive systems: Due to its robust performance and reliability, it is often used in automotive electronics.
  • Industrial control systems: The high current handling and low VCEsat make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in various consumer electronic devices where efficient and reliable transistor performance is required.

Q & A

  1. What is the collector-emitter voltage rating of the PBSS4130PANP,115?
    The collector-emitter voltage rating is 30 V.
  2. What is the collector current capability of this transistor array?
    The collector current capability is 1 A.
  3. What is the package type of the PBSS4130PANP,115?
    The package type is DFN2020-6 (6-HUSON, 2x2 mm).
  4. What is the frequency (fT) of the PBSS4130PANP,115?
    The frequency (fT) is 165 MHz.
  5. What are the key features of the PBSS4130PANP,115?
    The key features include very low VCEsat, high collector current capability, and high collector current gain at high IC.
  6. What are some common applications of the PBSS4130PANP,115?
    Common applications include automotive systems, industrial control systems, and consumer electronics.
  7. How much power can the PBSS4130PANP,115 dissipate?
    The power dissipation (Ptot) is 510 mW.
  8. Is the PBSS4130PANP,115 available in stock?
    Yes, it is available in stock and can be shipped immediately.
  9. What is the part status of the PBSS4130PANP,115?
    The part status is ACTIVE.
  10. Where can I find detailed specifications for the PBSS4130PANP,115?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Digi-Key.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):1A
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:100mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 500mA, 2V
Power - Max:510mW
Frequency - Transition:165MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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In Stock

$0.49
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Similar Products

Part Number PBSS4130PANP,115 PBSS4230PANP,115 PBSS4160PANP,115 PBSS4130PAN,115
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN, PNP NPN, PNP NPN, PNP 2 NPN (Dual)
Current - Collector (Ic) (Max) 1A 2A 1A 1A
Voltage - Collector Emitter Breakdown (Max) 30V 30V 60V 30V
Vce Saturation (Max) @ Ib, Ic 100mV @ 50mA, 500mA 290mV @ 200mA, 2A 120mV @ 50mA, 500mA 100mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 500mA, 2V 200 @ 1A, 2V 150 @ 500mA, 2V 210 @ 500mA, 2V
Power - Max 510mW 510mW 510mW 510mW
Frequency - Transition 165MHz 120MHz 175MHz 165MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2)

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