PBSS305NX,115
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Nexperia USA Inc. PBSS305NX,115

Manufacturer No:
PBSS305NX,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 4.6A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS305NX,115 is a high-performance NPN low VCEsat bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed to offer low collector-emitter saturation voltage (VCEsat), making it suitable for a variety of applications where high efficiency and low power loss are critical. The device is packaged in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.

Key Specifications

ParameterValue
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current4.6 A
Collector-Emitter Voltage VCEO Max80 V
Package TypeSOT89 (SC-62/TO-243)
VCEsat Max @ Ib, Ic360 mV @ 400 mA, 4 A
Operating Temperature-55°C to 150°C (TJ)

Key Features

  • Low collector-emitter saturation voltage (VCEsat) for high efficiency and low power loss.
  • High maximum DC collector current of 4.6 A.
  • High collector-emitter voltage rating of 80 V.
  • Compact SOT89 package suitable for space-constrained designs.
  • PNP complement available as PBSS305PX.

Applications

The PBSS305NX,115 transistor is versatile and can be used in a wide range of applications, including:

  • Automotive systems: For high-current switching and power management.
  • Industrial control systems: For reliable and efficient switching operations.
  • Consumer electronics: For power amplification and switching in compact designs.
  • Power supplies: For high-efficiency DC-DC converters and power management circuits.

Q & A

  1. What is the maximum DC collector current of the PBSS305NX,115 transistor?
    The maximum DC collector current is 4.6 A.
  2. What is the collector-emitter voltage rating of the PBSS305NX,115 transistor?
    The collector-emitter voltage rating is 80 V.
  3. What package type is the PBSS305NX,115 transistor available in?
    The transistor is available in a SOT89 (SC-62/TO-243) package.
  4. What is the VCEsat of the PBSS305NX,115 transistor?
    The VCEsat is 360 mV @ 400 mA, 4 A.
  5. Is there a PNP complement for the PBSS305NX,115 transistor?
    Yes, the PNP complement is the PBSS305PX.
  6. What are the typical applications of the PBSS305NX,115 transistor?
    The transistor is used in automotive systems, industrial control systems, consumer electronics, and power supplies.
  7. What is the operating temperature range of the PBSS305NX,115 transistor?
    The operating temperature range is -55°C to 150°C (TJ).
  8. Why is the low VCEsat important in this transistor?
    The low VCEsat is important for high efficiency and low power loss in switching and power management applications.
  9. Can the PBSS305NX,115 transistor be used in high-frequency applications?
    While it is primarily designed for general-purpose and low VCEsat applications, it may not be the best choice for very high-frequency applications without further evaluation.
  10. Where can I find detailed specifications and datasheets for the PBSS305NX,115 transistor?
    Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Mouser and Ariat-Tech.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4.6 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:240mV @ 230mA, 4.6A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2A, 2V
Power - Max:2.1 W
Frequency - Transition:110MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number PBSS305NX,115 PBSS305PX,115 PBSS306NX,115 PBSS301NX,115 PBSS302NX,115 PBSS303NX,115 PBSS304NX,115 PBSS305ND,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 4.6 A 4 A 4.5 A 5.3 A 5.3 A 5.1 A 4.7 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 100 V 12 V 20 V 30 V 60 V 100 V
Vce Saturation (Max) @ Ib, Ic 240mV @ 230mA, 4.6A 420mV @ 235mA, 4.7A 245mV @ 225mA, 4.5A 200mV @ 265mA, 5.3A 200mV @ 265mA, 5.3A 220mV @ 255mA, 5.1A 245mV @ 235mA, 4.7A 360mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2A, 2V 120 @ 2A, 2V 100 @ 2A, 2V 250 @ 2A, 2V 250 @ 2A, 2V 250 @ 2A, 2V 250 @ 2A, 2V 170 @ 500mA, 2V
Power - Max 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 1.1 W
Frequency - Transition 110MHz 100MHz 110MHz 140MHz 140MHz 130MHz 130MHz 140MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA SC-74, SOT-457
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 6-TSOP

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