PBSS303NX,115
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Nexperia USA Inc. PBSS303NX,115

Manufacturer No:
PBSS303NX,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 5.1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS303NX,115 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is known for its high current handling and robust thermal performance, making it a reliable choice for various electronic designs.

Key Specifications

ParameterDescription
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Voltage - Collector Emitter Breakdown (Max)30V
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2A, 2V
Current - Collector (Ic) (Max)5.1A
Power - Max2.1 W
Frequency - Transition130MHz
Operating Temperature150°C (TJ)
Package / CaseSOT-89-3
Mounting TypeSurface Mount
Lead Free Status / RoHS StatusLead free / RoHS Compliant

Key Features

  • High current handling capability of up to 5.1A.
  • High DC current gain (hFE) of 250 at 2A and 2V.
  • Maximum power dissipation of 2.1W.
  • Transition frequency of 130MHz, suitable for high-frequency applications.
  • Operating temperature up to 150°C, ensuring robust thermal performance.
  • Surface mount SOT-89-3 package for easy integration into modern electronic designs.
  • Lead-free and RoHS compliant, meeting environmental standards.

Applications

The PBSS303NX,115 transistor is versatile and can be used in a variety of applications across different industries. These include:

  • Automotive systems: For power management, motor control, and other high-current applications.
  • Industrial electronics: In power supplies, motor drives, and control circuits.
  • Consumer electronics: In audio amplifiers, power switches, and other high-performance electronic devices.
  • Power management: For voltage regulation, current limiting, and switching applications.

Q & A

  1. What is the transistor type of the PBSS303NX,115?
    The PBSS303NX,115 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter voltage breakdown for the PBSS303NX,115?
    The maximum collector-emitter voltage breakdown is 30V.
  3. What is the minimum DC current gain (hFE) of the PBSS303NX,115 at 2A and 2V?
    The minimum DC current gain (hFE) is 250 at 2A and 2V.
  4. What is the maximum current handling capability of the PBSS303NX,115?
    The maximum current handling capability is 5.1A.
  5. What is the maximum power dissipation of the PBSS303NX,115?
    The maximum power dissipation is 2.1W.
  6. What is the transition frequency of the PBSS303NX,115?
    The transition frequency is 130MHz.
  7. What is the operating temperature range of the PBSS303NX,115?
    The operating temperature range is up to 150°C (TJ).
  8. What package type does the PBSS303NX,115 use?
    The PBSS303NX,115 uses the SOT-89-3 package.
  9. Is the PBSS303NX,115 lead-free and RoHS compliant?
    Yes, the PBSS303NX,115 is lead-free and RoHS compliant.
  10. In which industries can the PBSS303NX,115 be applied?
    The PBSS303NX,115 can be applied in automotive, industrial, and consumer electronics industries.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5.1 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 255mA, 5.1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 2A, 2V
Power - Max:2.1 W
Frequency - Transition:130MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number PBSS303NX,115 PBSS305NX,115 PBSS303PX,115 PBSS304NX,115 PBSS306NX,115 PBSS301NX,115 PBSS302NX,115 PBSS303ND,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 5.1 A 4.6 A 5.1 A 4.7 A 4.5 A 5.3 A 5.3 A 1 A
Voltage - Collector Emitter Breakdown (Max) 30 V 80 V 30 V 60 V 100 V 12 V 20 V 60 V
Vce Saturation (Max) @ Ib, Ic 220mV @ 255mA, 5.1A 240mV @ 230mA, 4.6A 230mV @ 255mA, 5.1A 245mV @ 235mA, 4.7A 245mV @ 225mA, 4.5A 200mV @ 265mA, 5.3A 200mV @ 265mA, 5.3A 515mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A, 2V 180 @ 2A, 2V 200 @ 2A, 2V 250 @ 2A, 2V 100 @ 2A, 2V 250 @ 2A, 2V 250 @ 2A, 2V 345 @ 500mA, 2V
Power - Max 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 2.1 W 1.1 W
Frequency - Transition 130MHz 110MHz 130MHz 130MHz 110MHz 140MHz 140MHz 140MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA SC-74, SOT-457
Supplier Device Package SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 SOT-89 6-TSOP

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