Overview
The PBSS304NX,115 is a high-performance NPN low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. It is designed to offer high collector current capability, high collector current gain, and low collector-emitter saturation voltage, making it highly efficient and suitable for various high-voltage applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PBSS304NX | - |
| Package | SOT89 | - |
| Channel Type | NPN | - |
| VCEO (Max) | 60 | V |
| IC (Max) | 4700 | mA |
| hFE (Min) | 300 | - |
| TJ (Max) | 150 | °C |
| Ptot | 600 | mW |
| Automotive Qualified | Yes (AEC-Q101) | - |
Key Features
- Low collector-emitter saturation voltage (VCEsat) for high efficiency and less heat generation.
- High collector current capability (IC) and high collector current gain (hFE) at high IC.
- Compact SOT89 package, reducing the required Printed-Circuit Board (PCB) area.
- AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
Applications
- High-voltage DC-to-DC conversion.
- High-voltage MOSFET gate driving.
- High-voltage motor control.
- High-voltage power switches (e.g., motors, fans).
- Automotive applications.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the PBSS304NX,115 transistor?
The maximum collector-emitter voltage (VCEO) is 60 V.
- What is the maximum collector current (IC) of the PBSS304NX,115 transistor?
The maximum collector current (IC) is 4700 mA.
- What is the minimum collector current gain (hFE) of the PBSS304NX,115 transistor?
The minimum collector current gain (hFE) is 300.
- Is the PBSS304NX,115 transistor automotive qualified?
Yes, it is AEC-Q101 qualified.
- What package type is used for the PBSS304NX,115 transistor?
The transistor is housed in a SOT89 (SC-62/TO-243) package.
- What are some common applications of the PBSS304NX,115 transistor?
Common applications include high-voltage DC-to-DC conversion, high-voltage MOSFET gate driving, high-voltage motor control, and high-voltage power switches.
- What is the maximum junction temperature (TJ) of the PBSS304NX,115 transistor?
The maximum junction temperature (TJ) is 150°C.
- Does the PBSS304NX,115 transistor have a PNP complement?
Yes, the PNP complement is the PBSS304PX.
- What is the total power dissipation (Ptot) of the PBSS304NX,115 transistor?
The total power dissipation (Ptot) is 600 mW.
- How does the compact package of the PBSS304NX,115 benefit PCB design?
The compact SOT89 package reduces the required PCB area compared to conventional transistors.
