Overview
The BCV71,215 is a Bipolar Junction Transistor (BJT) manufactured by Nexperia USA Inc. This NPN transistor is designed for general-purpose applications and is known for its compact form factor and robust performance. The transistor is encapsulated in a SOT23 package, which is a small form factor that uses about 75% less board space, allowing for more design flexibility.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN Bipolar Junction Transistor (BJT) |
Collector-Emitter Voltage (Vce) | 60 V |
Maximum DC Collector Current (Ic) | 100 mA |
Collector-Emitter Saturation Voltage (Vce(sat)) | 210 mV |
Emitter-Base Voltage (Vebo) | 5 V |
Power Dissipation (Pd) | 250 mW |
Frequency (fT) | 100 MHz |
Package Type | SOT23 (TO-236AB) |
Key Features
- Compact SOT23 package, reducing board space by about 75% and enhancing design flexibility.
- High collector-emitter voltage of 60 V, suitable for a variety of applications.
- Low collector-emitter saturation voltage of 210 mV, ensuring efficient operation.
- Maximum DC collector current of 100 mA, supporting moderate current requirements.
- High frequency capability of 100 MHz, making it suitable for high-frequency applications.
Applications
The BCV71,215 is versatile and can be used in a range of general-purpose applications, including but not limited to:
- Amplifier circuits
- Switching circuits
- Audio and signal processing
- Automotive and industrial control systems
- Consumer electronics
Q & A
- What is the collector-emitter voltage of the BCV71,215 transistor? The collector-emitter voltage (Vce) is 60 V.
- What is the maximum DC collector current of the BCV71,215? The maximum DC collector current (Ic) is 100 mA.
- What is the package type of the BCV71,215 transistor? The transistor is packaged in a SOT23 (TO-236AB) package.
- What is the power dissipation of the BCV71,215 transistor? The power dissipation (Pd) is 250 mW.
- What is the frequency capability of the BCV71,215 transistor? The transistor has a frequency capability of 100 MHz.
- What is the emitter-base voltage of the BCV71,215 transistor? The emitter-base voltage (Vebo) is 5 V.
- What are the typical applications of the BCV71,215 transistor? It is used in amplifier circuits, switching circuits, audio and signal processing, automotive and industrial control systems, and consumer electronics.
- Why is the SOT23 package beneficial? The SOT23 package reduces board space by about 75% and enhances design flexibility.
- What is the collector-emitter saturation voltage of the BCV71,215 transistor? The collector-emitter saturation voltage (Vce(sat)) is 210 mV.
- Is the BCV71,215 suitable for high-frequency applications? Yes, with a frequency capability of 100 MHz, it is suitable for high-frequency applications.