Overview
The BC847BS is a 45 V, 100 mA NPN/NPN general-purpose transistor pair manufactured by Nexperia USA Inc. It is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This transistor is designed for general-purpose switching and amplification applications, offering low collector capacitance and low collector-emitter saturation voltage.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | -- | -- | 45 | V |
| IC (Collector Current) | -- | -- | -- | 100 | mA |
| V(BR)CBO (Collector-Base Breakdown Voltage) | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 50 | -- | -- | V |
| V(BR)CEO (Collector-Emitter Breakdown Voltage) | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 45 | -- | -- | V |
| V(BR)EBO (Emitter-Base Breakdown Voltage) | IC = 0 A; IE = 100 µA; Tamb = 25 °C | 5 | -- | -- | V |
| ICBO (Collector-Base Cut-off Current) | VCB = 30 V; IE = 0 A; Tj = 150 °C | -- | -- | 5 | µA |
| IEBO (Emitter-Base Cut-off Current) | VEB = 5 V; IC = 0 A; Tamb = 25 °C | -- | -- | 100 | nA |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | 200 | 450 | -- | -- |
Key Features
- Low collector capacitance
- Low collector-emitter saturation voltage
- Closely matched current gain
- Reduces the number of components and board space
- No mutual interference between the transistors
Applications
The BC847BS is suitable for general-purpose switching and amplification applications. It finds use in various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.
Q & A
- What is the collector-emitter voltage of the BC847BS transistor?
The collector-emitter voltage (VCEO) of the BC847BS transistor is up to 45 V. - What is the maximum collector current of the BC847BS transistor?
The maximum collector current (IC) of the BC847BS transistor is 100 mA. - What package type is the BC847BS transistor available in?
The BC847BS transistor is available in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. - What are the key features of the BC847BS transistor?
The key features include low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, reduced board space, and no mutual interference between the transistors. - What are the typical applications of the BC847BS transistor?
The BC847BS transistor is used in general-purpose switching and amplification applications across various industries. - Is the BC847BS transistor RoHS compliant?
Yes, the BC847BS transistor is RoHS compliant. - What is the DC current gain (hFE) of the BC847BS transistor?
The DC current gain (hFE) of the BC847BS transistor is between 200 and 450 at VCE = 5 V and IC = 2 mA. - What is the emitter-base breakdown voltage of the BC847BS transistor?
The emitter-base breakdown voltage (V(BR)EBO) of the BC847BS transistor is up to 5 V. - How does the BC847BS transistor reduce component count and board space?
The BC847BS transistor, being a dual transistor in a single package, reduces the number of components and board space required. - Is the BC847BS transistor suitable for high-temperature applications?
The BC847BS transistor can operate up to a junction temperature (Tj) of 150 °C.
