BC847C/DG/B4R
  • Share:

Nexperia USA Inc. BC847C/DG/B4R

Manufacturer No:
BC847C/DG/B4R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C/DG/B4R is a general-purpose NPN bipolar junction transistor produced by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

The BC847C is part of the BC847 series, which includes different gain selections (A, B, C), allowing designers to choose the most appropriate transistor for their specific application needs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) V(BR)CES - - 50 V
Collector-Base Breakdown Voltage (IC = 10 μA) V(BR)CBO - - 50 V
Emitter-Base Breakdown Voltage (IE = 1.0 μA) V(BR)EBO 6.0 - - V
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 200 420 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 0.25 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) - - 0.7 V
Collector Current IC - - 100 mA
Voltage Rating VCE - - 45 V
Package Type - - - SOT23 (TO-236AB) -

Key Features

  • General-Purpose Amplifier: Designed for low to medium power amplification in a variety of applications.
  • Compact Package: Housed in a small SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • High Current Gain: Offers a high DC current gain (hFE) with values ranging from 110 to 420, depending on the collector current.
  • Low Saturation Voltage: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
  • Environmental Compliance: Compliant with EU RoHS, CN RoHS, and REACH regulations, ensuring environmental sustainability.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and compliance with automotive standards.
  • Industrial Control Systems: Used in industrial control circuits, motor control, and power management systems.
  • Consumer Electronics: Found in consumer electronics such as audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and Computing: Utilized in power supplies, computing devices, and other electronic equipment requiring reliable amplification.

Q & A

  1. What is the maximum collector current of the BC847C transistor?

    The maximum collector current of the BC847C transistor is 100 mA.

  2. What is the package type of the BC847C transistor?

    The BC847C transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What are the typical applications of the BC847C transistor?

    The BC847C transistor is used in general-purpose amplifier applications, including automotive, industrial, consumer electronics, and power management systems.

  4. What is the collector-emitter breakdown voltage of the BC847C transistor?

    The collector-emitter breakdown voltage (V(BR)CEO) of the BC847C transistor is 45 V.

  5. Is the BC847C transistor compliant with environmental regulations?

    Yes, the BC847C transistor is compliant with EU RoHS, CN RoHS, and REACH regulations.

  6. What is the DC current gain range of the BC847C transistor?

    The DC current gain (hFE) of the BC847C transistor ranges from 110 to 420.

  7. What is the base-emitter saturation voltage of the BC847C transistor?

    The base-emitter saturation voltage (VBE(sat)) of the BC847C transistor is typically 0.7 V.

  8. Can the BC847C transistor be used in high-temperature environments?

    The BC847C transistor can operate in a range of temperatures, but specific high-temperature limits should be checked in the datasheet.

  9. What is the PNP complement of the BC847C transistor?

    The PNP complement of the BC847C transistor is the BC857C.

  10. Where can I find more detailed specifications and datasheets for the BC847C transistor?

    Detailed specifications and datasheets for the BC847C transistor can be found on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
333

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC847C/DG/B4R BC847B/DG/B4R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BFS20
BFS20
Diotec Semiconductor
TRANS NPN 20V 0.025A SOT23-3
PBSS5350D,135
PBSS5350D,135
Nexperia USA Inc.
TRANS PNP 50V 3A 6TSOP
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP