BC847C/DG/B4R
  • Share:

Nexperia USA Inc. BC847C/DG/B4R

Manufacturer No:
BC847C/DG/B4R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C/DG/B4R is a general-purpose NPN bipolar junction transistor produced by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

The BC847C is part of the BC847 series, which includes different gain selections (A, B, C), allowing designers to choose the most appropriate transistor for their specific application needs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) V(BR)CES - - 50 V
Collector-Base Breakdown Voltage (IC = 10 μA) V(BR)CBO - - 50 V
Emitter-Base Breakdown Voltage (IE = 1.0 μA) V(BR)EBO 6.0 - - V
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 200 420 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 0.25 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) - - 0.7 V
Collector Current IC - - 100 mA
Voltage Rating VCE - - 45 V
Package Type - - - SOT23 (TO-236AB) -

Key Features

  • General-Purpose Amplifier: Designed for low to medium power amplification in a variety of applications.
  • Compact Package: Housed in a small SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • High Current Gain: Offers a high DC current gain (hFE) with values ranging from 110 to 420, depending on the collector current.
  • Low Saturation Voltage: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
  • Environmental Compliance: Compliant with EU RoHS, CN RoHS, and REACH regulations, ensuring environmental sustainability.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and compliance with automotive standards.
  • Industrial Control Systems: Used in industrial control circuits, motor control, and power management systems.
  • Consumer Electronics: Found in consumer electronics such as audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and Computing: Utilized in power supplies, computing devices, and other electronic equipment requiring reliable amplification.

Q & A

  1. What is the maximum collector current of the BC847C transistor?

    The maximum collector current of the BC847C transistor is 100 mA.

  2. What is the package type of the BC847C transistor?

    The BC847C transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What are the typical applications of the BC847C transistor?

    The BC847C transistor is used in general-purpose amplifier applications, including automotive, industrial, consumer electronics, and power management systems.

  4. What is the collector-emitter breakdown voltage of the BC847C transistor?

    The collector-emitter breakdown voltage (V(BR)CEO) of the BC847C transistor is 45 V.

  5. Is the BC847C transistor compliant with environmental regulations?

    Yes, the BC847C transistor is compliant with EU RoHS, CN RoHS, and REACH regulations.

  6. What is the DC current gain range of the BC847C transistor?

    The DC current gain (hFE) of the BC847C transistor ranges from 110 to 420.

  7. What is the base-emitter saturation voltage of the BC847C transistor?

    The base-emitter saturation voltage (VBE(sat)) of the BC847C transistor is typically 0.7 V.

  8. Can the BC847C transistor be used in high-temperature environments?

    The BC847C transistor can operate in a range of temperatures, but specific high-temperature limits should be checked in the datasheet.

  9. What is the PNP complement of the BC847C transistor?

    The PNP complement of the BC847C transistor is the BC857C.

  10. Where can I find more detailed specifications and datasheets for the BC847C transistor?

    Detailed specifications and datasheets for the BC847C transistor can be found on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
333

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP

Similar Products

Part Number BC847C/DG/B4R BC847B/DG/B4R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92

Related Product By Brand

BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HC4050DB,112
74HC4050DB,112
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P