BC847C/DG/B4R
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Nexperia USA Inc. BC847C/DG/B4R

Manufacturer No:
BC847C/DG/B4R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C/DG/B4R is a general-purpose NPN bipolar junction transistor produced by Nexperia USA Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

The BC847C is part of the BC847 series, which includes different gain selections (A, B, C), allowing designers to choose the most appropriate transistor for their specific application needs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO - - 45 V
Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) V(BR)CES - - 50 V
Collector-Base Breakdown Voltage (IC = 10 μA) V(BR)CBO - - 50 V
Emitter-Base Breakdown Voltage (IE = 1.0 μA) V(BR)EBO 6.0 - - V
DC Current Gain (IC = 10 mA, VCE = 5.0 V) hFE 110 200 420 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 0.25 V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) - - 0.7 V
Collector Current IC - - 100 mA
Voltage Rating VCE - - 45 V
Package Type - - - SOT23 (TO-236AB) -

Key Features

  • General-Purpose Amplifier: Designed for low to medium power amplification in a variety of applications.
  • Compact Package: Housed in a small SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • High Current Gain: Offers a high DC current gain (hFE) with values ranging from 110 to 420, depending on the collector current.
  • Low Saturation Voltage: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
  • Environmental Compliance: Compliant with EU RoHS, CN RoHS, and REACH regulations, ensuring environmental sustainability.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and compliance with automotive standards.
  • Industrial Control Systems: Used in industrial control circuits, motor control, and power management systems.
  • Consumer Electronics: Found in consumer electronics such as audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and Computing: Utilized in power supplies, computing devices, and other electronic equipment requiring reliable amplification.

Q & A

  1. What is the maximum collector current of the BC847C transistor?

    The maximum collector current of the BC847C transistor is 100 mA.

  2. What is the package type of the BC847C transistor?

    The BC847C transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What are the typical applications of the BC847C transistor?

    The BC847C transistor is used in general-purpose amplifier applications, including automotive, industrial, consumer electronics, and power management systems.

  4. What is the collector-emitter breakdown voltage of the BC847C transistor?

    The collector-emitter breakdown voltage (V(BR)CEO) of the BC847C transistor is 45 V.

  5. Is the BC847C transistor compliant with environmental regulations?

    Yes, the BC847C transistor is compliant with EU RoHS, CN RoHS, and REACH regulations.

  6. What is the DC current gain range of the BC847C transistor?

    The DC current gain (hFE) of the BC847C transistor ranges from 110 to 420.

  7. What is the base-emitter saturation voltage of the BC847C transistor?

    The base-emitter saturation voltage (VBE(sat)) of the BC847C transistor is typically 0.7 V.

  8. Can the BC847C transistor be used in high-temperature environments?

    The BC847C transistor can operate in a range of temperatures, but specific high-temperature limits should be checked in the datasheet.

  9. What is the PNP complement of the BC847C transistor?

    The PNP complement of the BC847C transistor is the BC857C.

  10. Where can I find more detailed specifications and datasheets for the BC847C transistor?

    Detailed specifications and datasheets for the BC847C transistor can be found on the Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC847C/DG/B4R BC847B/DG/B4R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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