BC817-40QBZ
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Nexperia USA Inc. BC817-40QBZ

Manufacturer No:
BC817-40QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40QBZ is a 45 V, 500 mA NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is housed in a small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package, making it suitable for space-restricted applications. It is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments. The BC817-40QBZ offers high power dissipation capability, high current handling, and three current gain selections, making it versatile for various electronic designs.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C) f T [min] (MHz) Automotive qualified
BC817-40QB SOT8015 DFN1110D-3 1.1 x 1 x 0.48 NPN 350.0 45.0 500.0 250.0 600.0 150 100.0 Yes

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections (hFE min: 250, hFE max: 600)
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • AEC-Q101 qualified for automotive applications
  • General-purpose switching and amplification

Applications

The BC817-40QBZ transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Consumer electronics
  • Mobile devices
  • Wearables and IoT devices
  • Power and computing applications

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC817-40QBZ transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current (IC) of the BC817-40QBZ transistor?

    The maximum collector current (IC) is 500 mA.

  3. What are the current gain (hFE) ranges for the BC817-40QBZ transistor?

    The current gain (hFE) ranges from 250 to 600.

  4. Is the BC817-40QBZ transistor AEC-Q101 qualified?

    Yes, the BC817-40QBZ transistor is AEC-Q101 qualified.

  5. What is the package type of the BC817-40QBZ transistor?

    The package type is DFN1110D-3 (SOT8015).

  6. What are the dimensions of the BC817-40QBZ transistor package?

    The dimensions are 1.1 x 1 x 0.48 mm.

  7. Is the BC817-40QBZ transistor suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, it is suitable for AOI of solder joints.

  8. What is the maximum junction temperature (TJ) of the BC817-40QBZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  9. What is the minimum transition frequency (fT) of the BC817-40QBZ transistor?

    The minimum transition frequency (fT) is 100 MHz.

  10. Where can I purchase the BC817-40QBZ transistor?

    You can purchase it from Nexperia's official distributors or directly from Nexperia's sales organization.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC817-40QBZ BC817-40QCZ BC817-40QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 40 @ 500mA, 1V
Power - Max 350 mW 380 mW 900 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3

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