BC817-40QAZ
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Nexperia USA Inc. BC817-40QAZ

Manufacturer No:
BC817-40QAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40QAZ is a 45 V, 500 mA NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is designed for general-purpose switching and amplification applications. It is packaged in a leadless ultra-small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. The BC817-40QAZ is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterValue
Type NumberBC817-40QAZ
PackageDFN1010D-3 (SOT1215)
Package Size (mm)1.1 x 1 x 0.37
Channel TypeNPN
Maximum Collector-Emitter Voltage (VCEO)45 V
Maximum Collector Current (IC)500 mA
Current Gain (hFE)250 - 600
Maximum Junction Temperature (TJ)150°C
Gain Bandwidth Product (fT)100 MHz
Power Dissipation (Ptot)300 mW
Automotive QualifiedAEC-Q101

Key Features

  • General-purpose transistor for switching and amplification.
  • Two current gain selections (hFE = 250 - 600).
  • Low package height of 0.37 mm.
  • AEC-Q101 qualified for automotive applications.
  • Leadless ultra-small DFN1010D-3 (SOT1215) SMD package with visible and solderable side pads.

Applications

The BC817-40QAZ transistor is versatile and can be used in various applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • Mobile applications requiring compact and reliable components.
  • Industrial and consumer electronics for general-purpose switching and amplification.
  • Power and computing systems where high reliability and efficiency are crucial.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-40QAZ transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current of the BC817-40QAZ transistor?
    The maximum collector current (IC) is 500 mA.
  3. What is the current gain range of the BC817-40QAZ transistor?
    The current gain (hFE) ranges from 250 to 600.
  4. What is the package type of the BC817-40QAZ transistor?
    The transistor is packaged in a DFN1010D-3 (SOT1215) SMD package.
  5. Is the BC817-40QAZ transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  6. What is the maximum junction temperature of the BC817-40QAZ transistor?
    The maximum junction temperature (TJ) is 150°C.
  7. What is the gain bandwidth product of the BC817-40QAZ transistor?
    The gain bandwidth product (fT) is 100 MHz.
  8. What are some common applications of the BC817-40QAZ transistor?
    It is used in automotive, mobile, industrial, and consumer electronics for general-purpose switching and amplification.
  9. What is the power dissipation of the BC817-40QAZ transistor?
    The power dissipation (Ptot) is 300 mW.
  10. Where can I purchase the BC817-40QAZ transistor?
    You can purchase it from Nexperia or through their global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 1V
Power - Max:900 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Same Series
BC817-25QAZ
BC817-25QAZ
TRANS NPN 45V 0.5A DFN1010D-3

Similar Products

Part Number BC817-40QAZ BC817-40QCZ BC817-40QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 900 mW 380 mW 350 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1412D-3 DFN1110D-3

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