BC807-40QC-QZ
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Nexperia USA Inc. BC807-40QC-QZ

Manufacturer No:
BC807-40QC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QC-QZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is packaged in a small DFN1412D-3 (SOT8009) surface-mounted device (SMD) plastic package, making it suitable for space-restricted designs.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCEO)45 V
Collector Current (IC)500 mA
Transition Frequency (fT)80 MHz
Power Dissipation (Ptot)380 mW
Current Gain (hFE)250 to 600
Junction Temperature (TJ)150 °C
Package TypeDFN1412D-3 (SOT8009)
Package Size1.4 x 1.2 x 0.48 mm
Automotive QualifiedYes, AEC-Q101

Key Features

  • High current capability: 500 mA collector current.
  • High power dissipation: 380 mW.
  • Three current gain selections: hFE ranges from 250 to 600.
  • Small footprint: DFN1412D-3 (SOT8009) package with a low profile of 0.48 mm.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified for automotive applications.

Applications

The BC807-40QC-QZ transistor is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control: For general-purpose switching and amplification in industrial environments.
  • Consumer electronics: In mobile, computing, and consumer devices where space is limited.
  • Power management: In power supply and power management circuits.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC807-40QC-QZ transistor?
    The collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current (IC) of this transistor?
    The maximum collector current (IC) is 500 mA.
  3. What is the transition frequency (fT) of the BC807-40QC-QZ?
    The transition frequency (fT) is 80 MHz.
  4. What is the power dissipation capability of this transistor?
    The power dissipation capability is 380 mW.
  5. What are the current gain (hFE) ranges for this transistor?
    The current gain (hFE) ranges from 250 to 600.
  6. What is the junction temperature (TJ) limit for the BC807-40QC-QZ?
    The junction temperature (TJ) limit is 150 °C.
  7. In what package is the BC807-40QC-QZ transistor available?
    The transistor is available in a DFN1412D-3 (SOT8009) package.
  8. Is the BC807-40QC-QZ transistor qualified for automotive use?
    Yes, it is qualified according to AEC-Q101 for automotive applications.
  9. What are some of the key applications for this transistor?
    It is used in automotive systems, industrial control, consumer electronics, and power management.
  10. Is the BC807-40QC-QZ suitable for Automatic Optical Inspection (AOI) of solder joints?
    Yes, it is suitable for AOI of solder joints.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC807-40QC-QZ BC807-40QCH-QZ BC807-40QB-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 380 mW 455 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1110D-3

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