BC807-40QCH-QZ
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Nexperia USA Inc. BC807-40QCH-QZ

Manufacturer No:
BC807-40QCH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QCH-QZ is a 45 V, 500 mA PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of Nexperia's extensive portfolio of bipolar transistors, designed to meet the demands of various electronic applications. It is known for its high power dissipation capability, high current handling, and three current gain selections, making it versatile for different design needs.

Key Specifications

ParameterValue
PackageDFN1412D-3 (SOT8009)
Size (mm)1.4 x 1.2 x 0.48
Channel TypePNP
Total Power Dissipation (Ptot)380 mW
Maximum Collector-Emitter Voltage (VCEO)-45 V
Maximum Collector Current (IC)-500 mA
Minimum Current Gain (hFE)250
Maximum Current Gain (hFE)600
Maximum Junction Temperature (TJ)150°C
Minimum Transition Frequency (fT)80 MHz
Automotive QualifiedYes (AEC-Q101)

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections for versatility
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • Qualified according to AEC-Q101, recommended for automotive applications
  • General-purpose switching and amplification
  • Ideal for space-restricted applications

Applications

The BC807-40QCH-QZ transistor is suitable for a wide range of applications across various industries, including:

  • Automotive
  • Industrial
  • Power and computing
  • Consumer electronics
  • Mobile and wearable devices

Q & A

  1. What is the maximum collector current of the BC807-40QCH-QZ transistor?
    The maximum collector current is 500 mA.
  2. What is the maximum collector-emitter voltage of the BC807-40QCH-QZ transistor?
    The maximum collector-emitter voltage is -45 V.
  3. Is the BC807-40QCH-QZ transistor automotive qualified?
    Yes, it is qualified according to AEC-Q101.
  4. What is the package type of the BC807-40QCH-QZ transistor?
    The package type is DFN1412D-3 (SOT8009).
  5. What are the dimensions of the BC807-40QCH-QZ transistor package?
    The dimensions are 1.4 x 1.2 x 0.48 mm.
  6. What is the minimum current gain (hFE) of the BC807-40QCH-QZ transistor?
    The minimum current gain is 250.
  7. What is the maximum junction temperature of the BC807-40QCH-QZ transistor?
    The maximum junction temperature is 150°C.
  8. Is the BC807-40QCH-QZ transistor suitable for space-restricted applications?
    Yes, it is ideal for space-restricted applications due to its small footprint and low package height.
  9. What is the total power dissipation capability of the BC807-40QCH-QZ transistor?
    The total power dissipation capability is 380 mW.
  10. What is the minimum transition frequency (fT) of the BC807-40QCH-QZ transistor?
    The minimum transition frequency is 80 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:455 mW
Frequency - Transition:80MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC807-40QCH-QZ BC807-40QBH-QZ BC807-40QC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 455 mW 420 mW 380 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 175°C (TJ) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3 DFN1412D-3

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