BC807-40QBH-QZ
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Nexperia USA Inc. BC807-40QBH-QZ

Manufacturer No:
BC807-40QBH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QBH-QZ is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC807QBH-Q series, which is specifically designed for automotive applications and is qualified according to the AEC-Q101 standard. It features a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

ParameterValue
Voltage (VCE)45 V
Collector Current (IC)500 mA
Transition Frequency (fT)80 MHz
Power Dissipation (Ptot)350 mW
Package TypeSOT23 (TO-236AB)
Package Size2.9 x 1.3 x 1 mm
Maximum Junction Temperature (TJ)150°C
RoHS ComplianceYes

Key Features

  • Automotive qualified according to AEC-Q101, ensuring reliability in harsh automotive environments.
  • High current capability with a collector current of 500 mA.
  • High transition frequency of 80 MHz, suitable for high-frequency applications.
  • Compact SOT23 package, ideal for space-constrained designs.
  • General-purpose switching and amplification capabilities.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The BC807-40QBH-QZ transistor is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as infotainment systems, safety systems, and power management.
  • Industrial control: It can be used in industrial control systems, motor control, and power supplies.
  • Consumer electronics: Suitable for use in consumer devices such as audio amplifiers, power supplies, and general-purpose switching circuits.
  • Power management: Can be used in power management circuits, voltage regulators, and DC-DC converters.

Q & A

  1. What is the voltage rating of the BC807-40QBH-QZ transistor?
    The voltage rating (VCE) of the BC807-40QBH-QZ transistor is 45 V.
  2. What is the collector current of the BC807-40QBH-QZ transistor?
    The collector current (IC) of the BC807-40QBH-QZ transistor is 500 mA.
  3. What is the transition frequency of the BC807-40QBH-QZ transistor?
    The transition frequency (fT) of the BC807-40QBH-QZ transistor is 80 MHz.
  4. What is the package type of the BC807-40QBH-QZ transistor?
    The BC807-40QBH-QZ transistor comes in a SOT23 (TO-236AB) package.
  5. Is the BC807-40QBH-QZ transistor RoHS compliant?
    Yes, the BC807-40QBH-QZ transistor is RoHS compliant.
  6. What is the maximum junction temperature of the BC807-40QBH-QZ transistor?
    The maximum junction temperature (TJ) of the BC807-40QBH-QZ transistor is 150°C.
  7. What are the typical applications of the BC807-40QBH-QZ transistor?
    The BC807-40QBH-QZ transistor is typically used in automotive, industrial control, consumer electronics, and power management applications.
  8. Is the BC807-40QBH-QZ transistor suitable for high-frequency applications?
    Yes, with a transition frequency of 80 MHz, the BC807-40QBH-QZ transistor is suitable for high-frequency applications.
  9. What is the power dissipation of the BC807-40QBH-QZ transistor?
    The power dissipation (Ptot) of the BC807-40QBH-QZ transistor is 350 mW.
  10. Can the BC807-40QBH-QZ transistor be used in general-purpose switching and amplification?
    Yes, the BC807-40QBH-QZ transistor is capable of general-purpose switching and amplification.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:420 mW
Frequency - Transition:80MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC807-40QBH-QZ BC807-40QCH-QZ BC807-40QB-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 420 mW 455 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 175°C (TJ) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

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